{"title":"A fast transient response capless low-dropout regulator with NMOS-FVF structure","authors":"Jiahao Xiong, Xiao Zhao, Bojiang Zhang, Yicheng Peng","doi":"10.1016/j.vlsi.2025.102481","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents an NMOS-FVF low-dropout regulator (LDO) with adaptive biasing. Leveraging the small gate capacitance and adaptive biasing mechanism, the proposed LDO achieves minimal undershoot and overshoot, along with an exceptionally short recovery time. Additionally, strategic incorporation of adaptive biasing substantially enhances load regulation, effectively addressing the limitations of inadequate load regulation commonly observed in traditional FVF-LDOs. The proposed design was fabricated in a 180 nm CMOS process, featuring a quiescent current of 110 <span><math><mi>μ</mi></math></span>A and a maximum load current of 50 mA. Transient simulation results demonstrate an undershoot of 64 mV, an overshoot of 42 mV, and a recovery time of 30 ns.</div></div>","PeriodicalId":54973,"journal":{"name":"Integration-The Vlsi Journal","volume":"105 ","pages":"Article 102481"},"PeriodicalIF":2.5000,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integration-The Vlsi Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167926025001385","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents an NMOS-FVF low-dropout regulator (LDO) with adaptive biasing. Leveraging the small gate capacitance and adaptive biasing mechanism, the proposed LDO achieves minimal undershoot and overshoot, along with an exceptionally short recovery time. Additionally, strategic incorporation of adaptive biasing substantially enhances load regulation, effectively addressing the limitations of inadequate load regulation commonly observed in traditional FVF-LDOs. The proposed design was fabricated in a 180 nm CMOS process, featuring a quiescent current of 110 A and a maximum load current of 50 mA. Transient simulation results demonstrate an undershoot of 64 mV, an overshoot of 42 mV, and a recovery time of 30 ns.
期刊介绍:
Integration''s aim is to cover every aspect of the VLSI area, with an emphasis on cross-fertilization between various fields of science, and the design, verification, test and applications of integrated circuits and systems, as well as closely related topics in process and device technologies. Individual issues will feature peer-reviewed tutorials and articles as well as reviews of recent publications. The intended coverage of the journal can be assessed by examining the following (non-exclusive) list of topics:
Specification methods and languages; Analog/Digital Integrated Circuits and Systems; VLSI architectures; Algorithms, methods and tools for modeling, simulation, synthesis and verification of integrated circuits and systems of any complexity; Embedded systems; High-level synthesis for VLSI systems; Logic synthesis and finite automata; Testing, design-for-test and test generation algorithms; Physical design; Formal verification; Algorithms implemented in VLSI systems; Systems engineering; Heterogeneous systems.