Vacancy-ordered Cs2TiBr6 memristors: Enabling ultrafast switching and efficient image processing

Abstract

Memristors have shown promise as hardware for emerging neuromorphic memory-in-computing applications, but their practical implementation is hindered by random conductive filament (CF) growth from disordered vacancy defects. In recent work published in Matter, an ultrafast-switching memristor was developed based on vacancy-ordered double perovskite Cs₂TiBr₆ nanocrystals, achieving switching times of 28 and 54 ns for SET and RESET processes, respectively. The ordered vacancy structure enables predictable CF formation/rupture, which suppresses ion migration randomness. An 8 × 8 crossbar array of these memristors demonstrates 10% improved recognition accuracy for denoised images, showcasing their potential in real-time visual information processing.