Fast-response indium aluminum gallium oxide UV photodetectors with improved responsivity

Abstract

In this work, we fabricated indium aluminum gallium oxide (IAGO) metal-semiconductor-metal photodetectors (PDs) with varying RF powers of the indium oxide target (P_In), and their optoelectronic characteristics were systematically investigated. At P_In below 60 W, the PDs showed relatively low photocurrent and poor responsivity. When P_In increased to 100 W, both the responsivity and rejection ratio (RR) improved significantly. The optimal photoresponse was achieved at a P_In of 100 W, exhibiting a maximum responsivity of 0.02 A/W at 280 nm and a RR of approximately 6.14 × 10 ³ . Furthermore, devices with P_In above 60 W demonstrated fast time-resolved responses with rise times under 1 s and decay times below 0.5 s, indicating their potential for UV photodetection applications.