SnO2:F/β-Ga2O3 thin-film heterojunctions as sensitive photodetectors for short-wavelength UV radiation

IF 4.6 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mehran Vaezi , Ali Shirpay , M.M. Bagheri-Mohagheghi
{"title":"SnO2:F/β-Ga2O3 thin-film heterojunctions as sensitive photodetectors for short-wavelength UV radiation","authors":"Mehran Vaezi ,&nbsp;Ali Shirpay ,&nbsp;M.M. Bagheri-Mohagheghi","doi":"10.1016/j.rinp.2025.108375","DOIUrl":null,"url":null,"abstract":"<div><div>Monitoring UVC radiation from the ozone hole is crucial due to its harmful effects on both the environment and human health. To address this need, photodetectors operating in the short-wavelength ultraviolet (UVC) region are essential. In this study, optical photodetectors based on thin films of fluorine-doped tin oxide (SnO<sub>2</sub>:F or FTO) and gallium oxide (β-Ga<sub>2</sub>O<sub>3</sub>) were fabricated using the spray pyrolysis technique. Initially, individual thin films of SnO<sub>2</sub>:F and β-Ga<sub>2</sub>O<sub>3</sub> were prepared and characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–Vis spectroscopy, and current–voltage (I–V) measurements. Subsequently, photodetectors composed of stacked SnO<sub>2</sub>:F/β-Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated, and their photoresponse was evaluated by varying the concentration of Ga<sub>2</sub>O<sub>3</sub>. Among the tested concentrations, the device with 0.2 M Ga<sub>2</sub>O<sub>3</sub> exhibited the best performance, with a sensitivity of 6.62 × 10<sup>−2</sup>, an external quantum efficiency (EQE) of 233.92 %, and a responsivity of 47.72 mA/W. These results suggest that SnO<sub>2</sub>:F/β-Ga<sub>2</sub>O<sub>3</sub> thin-film photodetectors are promising candidates for UVC detection and can be effectively utilized in environmental monitoring applications, such as ozone hole observation.</div></div>","PeriodicalId":21042,"journal":{"name":"Results in Physics","volume":"76 ","pages":"Article 108375"},"PeriodicalIF":4.6000,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Results in Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2211379725002694","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Monitoring UVC radiation from the ozone hole is crucial due to its harmful effects on both the environment and human health. To address this need, photodetectors operating in the short-wavelength ultraviolet (UVC) region are essential. In this study, optical photodetectors based on thin films of fluorine-doped tin oxide (SnO2:F or FTO) and gallium oxide (β-Ga2O3) were fabricated using the spray pyrolysis technique. Initially, individual thin films of SnO2:F and β-Ga2O3 were prepared and characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–Vis spectroscopy, and current–voltage (I–V) measurements. Subsequently, photodetectors composed of stacked SnO2:F/β-Ga2O3 thin films were fabricated, and their photoresponse was evaluated by varying the concentration of Ga2O3. Among the tested concentrations, the device with 0.2 M Ga2O3 exhibited the best performance, with a sensitivity of 6.62 × 10−2, an external quantum efficiency (EQE) of 233.92 %, and a responsivity of 47.72 mA/W. These results suggest that SnO2:F/β-Ga2O3 thin-film photodetectors are promising candidates for UVC detection and can be effectively utilized in environmental monitoring applications, such as ozone hole observation.
SnO2:F/β-Ga2O3薄膜异质结作为短波紫外辐射敏感光电探测器
监测来自臭氧空洞的紫外线辐射至关重要,因为它对环境和人类健康都有有害影响。为了满足这一需求,在短波长紫外线(UVC)区域工作的光电探测器是必不可少的。本研究采用喷雾热解技术制备了基于掺氟氧化锡(SnO2:F or FTO)和氧化镓(β-Ga2O3)薄膜的光电探测器。首先,制备了SnO2:F和β-Ga2O3薄膜,并使用x射线衍射(XRD)、扫描电子显微镜(SEM)、紫外可见光谱(UV-Vis)和电流-电压(I-V)测量对其进行了表征。随后,制备了由SnO2:F/β-Ga2O3薄膜堆叠而成的光电探测器,并通过改变Ga2O3的浓度来评价其光响应。在测试浓度中,0.2 M Ga2O3的器件性能最好,灵敏度为6.62 × 10−2,外量子效率(EQE)为233.92%,响应度为47.72 mA/W。这些结果表明,SnO2:F/β-Ga2O3薄膜光电探测器是很有希望用于UVC检测的候选者,可以有效地用于环境监测应用,如臭氧空洞观测。
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来源期刊
Results in Physics
Results in Physics MATERIALS SCIENCE, MULTIDISCIPLINARYPHYSIC-PHYSICS, MULTIDISCIPLINARY
CiteScore
8.70
自引率
9.40%
发文量
754
审稿时长
50 days
期刊介绍: Results in Physics is an open access journal offering authors the opportunity to publish in all fundamental and interdisciplinary areas of physics, materials science, and applied physics. Papers of a theoretical, computational, and experimental nature are all welcome. Results in Physics accepts papers that are scientifically sound, technically correct and provide valuable new knowledge to the physics community. Topics such as three-dimensional flow and magnetohydrodynamics are not within the scope of Results in Physics. Results in Physics welcomes three types of papers: 1. Full research papers 2. Microarticles: very short papers, no longer than two pages. They may consist of a single, but well-described piece of information, such as: - Data and/or a plot plus a description - Description of a new method or instrumentation - Negative results - Concept or design study 3. Letters to the Editor: Letters discussing a recent article published in Results in Physics are welcome. These are objective, constructive, or educational critiques of papers published in Results in Physics. Accepted letters will be sent to the author of the original paper for a response. Each letter and response is published together. Letters should be received within 8 weeks of the article''s publication. They should not exceed 750 words of text and 10 references.
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