Antimony background in molecular beam epitaxy growth of antimonide superlattices

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-07-31 DOI:10.1016/j.jcrysgro.2025.128312

Hao Zhou , Jianmei Li , Xiaozhen Wang , Yiqiao Chen , Chang Liu

引用次数: 0

Abstract

In this paper, the presence of residual antimony in the background of the growth chamber of molecular beam epitaxy (MBE) system was observed, and the behavior of residual antimony (Sb) during MBE growth of InAs/GaSb superlattices was investigated for the first time. The investigation revealed that the residual Sb, present in the background during superlattice growth, become incorporated into the InAs layer. This significant finding calls into question the conventional assertion that Sb in InAs is derived from the diffusion of Sb in GaSb, thereby establishing a new paradigm for understanding the origin of Sb in InAs. Indeed, two sources of Sb have been identified in the InAs sublayer of InAs/GaSb type II superlattices. Firstly, there is the conventional diffusion of Sb in GaSb, and secondly, there is Sb in the background in some MBE growth chamber. This finding also facilitates a more profound and comprehensive understanding of the epitaxial growth process of antimonide superlattices.

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锑化物超晶格分子束外延生长中的锑背景

本文观察了分子束外延（MBE）系统生长腔背景中残留锑的存在，并首次研究了InAs/GaSb超晶格MBE生长过程中残留锑的行为。研究发现，在超晶格生长过程中，背景中残留的Sb被掺入到InAs层中。这一重大发现对InAs中的Sb来源于Sb在GaSb中的扩散的传统说法提出了质疑，从而为理解InAs中Sb的起源建立了一个新的范式。事实上，在InAs/GaSb II型超晶格的InAs亚层中已经确定了Sb的两个来源。首先是Sb在GaSb中的常规扩散，其次是在某些MBE生长室的背景中存在Sb。这一发现也有助于对锑化物超晶格的外延生长过程有更深刻和全面的认识。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.