Magnetic effect on dielectric behavior of LaCoO3 film

Abstract

In this paper, a LaCoO₃/Si (100) film was fabricated using the pulsed laser deposition technique. The surface morphology, chemical states and crystalline of the LaCoO₃ film were characterized by scanning electron microscopy, X-ray powder diffraction and X-ray photoelectron spectroscopy. The dielectric properties of the film were measured using a physical property measurement system (PPMS, Dynacool-9, Quantum Design, US) equipped with an impedance analyzer (Keysight E4990A). A magnetic effect on the dielectric behavior was observed in the LaCoO₃ film. The results reveal that the freezing of dipoles and mobile charge carriers play a crucial role of the magnetic effect on the dielectric behavior in the range of the low temperature and high frequency, which the interfacial polarization play a dominant role in the range of the high temperature and low frequency. The curves of real and imaginary parts of the capacitance were simulated using an equivalent circuit model. Through the introduction of inductance (L), the influence of magnetic fields on dielectric properties was analyzed in detail across varying temperature and frequency conditions. This work not only advances the development of magnetic devices, such as sensors and memory devices, but also provides a viable technique for investigating the physical mechanisms underlying the coupling between magnetism and dielectric polarization.