{"title":"An InGaAsSb Based 640 × 512 Focal Plane Array With Low Surface Leakage Current for Extended Shortwave Detection","authors":"Ruoyu Xie;Yifan Shan;Lingze Yao;Donghai Wu;Xiangbin Su;Hongyue Hao;Dongwei Jiang;Mengqi Yang;Ye Zhang;Hui Xie;Guowei Wang;Yingqiang Xu;Haiqiao Ni;Zhichuan Niu","doi":"10.1109/JPHOT.2025.3586862","DOIUrl":null,"url":null,"abstract":"An extended-wavelength InGaAsSb focal plane array (FPA) with a 15 μm pixel pitch, 640 × 512 format, and a cutoff wavelength of 3.22 μm is demonstrated. Through the atomic layer deposition Al<sub>2</sub>O<sub>3</sub> passivation technology, the natural oxide leakage channel is reduced and the leakage current of the device is well suppressed. The optoelectronic performance of the FPA is close to that of the large-scale test unit. At 180 K, the quantum efficiency of the FPA is 45.6% and the dark current is about 2.76 × 10<sup>−5</sup> A/cm<sup>2</sup>. Laboratory imaging shows potential for applications at temperatures above 200 K.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 4","pages":"1-6"},"PeriodicalIF":2.4000,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11072720","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Journal","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11072720/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
An extended-wavelength InGaAsSb focal plane array (FPA) with a 15 μm pixel pitch, 640 × 512 format, and a cutoff wavelength of 3.22 μm is demonstrated. Through the atomic layer deposition Al2O3 passivation technology, the natural oxide leakage channel is reduced and the leakage current of the device is well suppressed. The optoelectronic performance of the FPA is close to that of the large-scale test unit. At 180 K, the quantum efficiency of the FPA is 45.6% and the dark current is about 2.76 × 10−5 A/cm2. Laboratory imaging shows potential for applications at temperatures above 200 K.
期刊介绍:
Breakthroughs in the generation of light and in its control and utilization have given rise to the field of Photonics, a rapidly expanding area of science and technology with major technological and economic impact. Photonics integrates quantum electronics and optics to accelerate progress in the generation of novel photon sources and in their utilization in emerging applications at the micro and nano scales spanning from the far-infrared/THz to the x-ray region of the electromagnetic spectrum. IEEE Photonics Journal is an online-only journal dedicated to the rapid disclosure of top-quality peer-reviewed research at the forefront of all areas of photonics. Contributions addressing issues ranging from fundamental understanding to emerging technologies and applications are within the scope of the Journal. The Journal includes topics in: Photon sources from far infrared to X-rays, Photonics materials and engineered photonic structures, Integrated optics and optoelectronic, Ultrafast, attosecond, high field and short wavelength photonics, Biophotonics, including DNA photonics, Nanophotonics, Magnetophotonics, Fundamentals of light propagation and interaction; nonlinear effects, Optical data storage, Fiber optics and optical communications devices, systems, and technologies, Micro Opto Electro Mechanical Systems (MOEMS), Microwave photonics, Optical Sensors.