{"title":"Observation-velocity-convergence-based determination of optimal seeding time for sapphire preparation via Kyroupous method","authors":"Jia Xu , Tiezhu Qiao , Huijie Dong","doi":"10.1016/j.jcrysgro.2025.128293","DOIUrl":null,"url":null,"abstract":"<div><div>High-quality seeding operations are crucial for ensuring the preparation of high-quality sapphire single crystals, in which the accurate determination of seeding timing is a key issue. However, existing detection methods possess limitations in obtaining sufficient feature points, assessing single feature dimension, and tracking spoke motion on the melt surface. To address these challenges, this study proposes an observation-velocity-convergence method to detect the optimal timing for crystal seeding. The industrial charge coupled device sensors replace eyes of skilled workers to observe in this method. This strategy involves applying an edge detection algorithm to analyze the surface texture of the sapphire melt, optimizing the non-maximum suppression process to increase the number of feature points to 10. Non-uniform sampling is employed to select key frames and extract relevant information about features. The stability of data is assessed by analyzing changes in adjacent angles of characteristic points on the melt surface, followed by determining the best seeding timing using a speed fitting model. This approach not only enhances the dimensional aspect of detecting seeding timing but also improves accuracy while expediting detection rate and reducing data redundancy. Experimental results demonstrate that this strategy increases Class A seed crystal seeding success percentage by 3.3% while reducing seeding time by approximately 0.2 h.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128293"},"PeriodicalIF":2.0000,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024825002477","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
High-quality seeding operations are crucial for ensuring the preparation of high-quality sapphire single crystals, in which the accurate determination of seeding timing is a key issue. However, existing detection methods possess limitations in obtaining sufficient feature points, assessing single feature dimension, and tracking spoke motion on the melt surface. To address these challenges, this study proposes an observation-velocity-convergence method to detect the optimal timing for crystal seeding. The industrial charge coupled device sensors replace eyes of skilled workers to observe in this method. This strategy involves applying an edge detection algorithm to analyze the surface texture of the sapphire melt, optimizing the non-maximum suppression process to increase the number of feature points to 10. Non-uniform sampling is employed to select key frames and extract relevant information about features. The stability of data is assessed by analyzing changes in adjacent angles of characteristic points on the melt surface, followed by determining the best seeding timing using a speed fitting model. This approach not only enhances the dimensional aspect of detecting seeding timing but also improves accuracy while expediting detection rate and reducing data redundancy. Experimental results demonstrate that this strategy increases Class A seed crystal seeding success percentage by 3.3% while reducing seeding time by approximately 0.2 h.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.