A Compact High-Speed Capacitive Data Transfer Link With Common Mode Transient Rejection for Isolated Sensor Interfaces

IF 3.1 2区 工程技术 Q2 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Isa Altoobaji;Ahmad Hassan;Mohamed Ali;Yves Audet;Ahmed Lakhssassi
{"title":"A Compact High-Speed Capacitive Data Transfer Link With Common Mode Transient Rejection for Isolated Sensor Interfaces","authors":"Isa Altoobaji;Ahmad Hassan;Mohamed Ali;Yves Audet;Ahmed Lakhssassi","doi":"10.1109/TVLSI.2025.3573226","DOIUrl":null,"url":null,"abstract":"In this article, a compact differential data transfer link architecture for isolated sensor interfaces (SIs) and immune to common mode transients (CMTs) is presented. The proposed architecture shows low latency supporting high-speed transmission with a low bit error rate (BER) in the presence of CMT noise for applications, such as data acquisition, biomedical equipment, and communication networks. In transportation applications, motors and actuators are subjected to harsh environmental conditions, e.g., lightning strikes and abnormal voltage operations. These conditions introduce noise and can cause damage to small electronics due to high-voltage power surges. To ensure human safety and circuitry protection, a data transfer system must be implemented between high-voltage and low-voltage domains. The proposed design has been simulated using Cadence tools, and a prototype has been manufactured in a 0.18-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m CMOS process. The fabricated prototype consumes an effective silicon area of <inline-formula> <tex-math>$37.2\\times 10^{3}~\\mu $ </tex-math></inline-formula>m<sup>2</sup> and can sustain a breakdown voltage of 710 V<sub>rms</sub>. Experimental results show that the proposed solution achieves a CMT immunity (CMTI) of 2.5 kV/<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>s at a data rate of 480 Mb/s with a BER of <inline-formula> <tex-math>$10^{-12}$ </tex-math></inline-formula>. The propagation delay is 3.9 ns with a 4 ps/°C variation rate over temperatures ranging from <inline-formula> <tex-math>$- 31~^{\\circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$100~^{\\circ }$ </tex-math></inline-formula>C. Under typical test conditions, the BER reaches <inline-formula> <tex-math>$10^{-15}$ </tex-math></inline-formula> with a peak-to-peak data dependent jitter (DDJ) of 29.8 ps.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"33 8","pages":"2163-2171"},"PeriodicalIF":3.1000,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11021663/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
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Abstract

In this article, a compact differential data transfer link architecture for isolated sensor interfaces (SIs) and immune to common mode transients (CMTs) is presented. The proposed architecture shows low latency supporting high-speed transmission with a low bit error rate (BER) in the presence of CMT noise for applications, such as data acquisition, biomedical equipment, and communication networks. In transportation applications, motors and actuators are subjected to harsh environmental conditions, e.g., lightning strikes and abnormal voltage operations. These conditions introduce noise and can cause damage to small electronics due to high-voltage power surges. To ensure human safety and circuitry protection, a data transfer system must be implemented between high-voltage and low-voltage domains. The proposed design has been simulated using Cadence tools, and a prototype has been manufactured in a 0.18- $\mu $ m CMOS process. The fabricated prototype consumes an effective silicon area of $37.2\times 10^{3}~\mu $ m2 and can sustain a breakdown voltage of 710 Vrms. Experimental results show that the proposed solution achieves a CMT immunity (CMTI) of 2.5 kV/ $\mu $ s at a data rate of 480 Mb/s with a BER of $10^{-12}$ . The propagation delay is 3.9 ns with a 4 ps/°C variation rate over temperatures ranging from $- 31~^{\circ }$ C to $100~^{\circ }$ C. Under typical test conditions, the BER reaches $10^{-15}$ with a peak-to-peak data dependent jitter (DDJ) of 29.8 ps.
用于隔离传感器接口的具有共模瞬态抑制的紧凑型高速电容性数据传输链路
在本文中,提出了一个紧凑的差分数据传输链路结构,用于隔离传感器接口(si)和免疫共模瞬变(cmt)。所提出的架构具有低延迟,支持在CMT噪声存在下的高速传输和低误码率(BER),适用于数据采集、生物医学设备和通信网络等应用。在运输应用中,电机和执行器受到恶劣环境条件的影响,例如雷击和异常电压操作。这些条件会产生噪音,并可能由于高压电涌而损坏小型电子设备。为了确保人身安全和电路保护,必须在高压和低压域之间实现数据传输系统。所提出的设计已使用Cadence工具进行了模拟,并在0.18- $\mu $ m CMOS工艺中制造了原型。制造的原型消耗了37.2\ × 10^{3}~\mu $ m2的有效硅面积,并能维持710 Vrms的击穿电压。实验结果表明,该方案在480 Mb/s的数据速率和10^{-12}$的误码率下实现了2.5 kV/ $\mu $ s的CMT抗扰度(CMTI)。传输延迟为3.9 ns,在$- 31~ $ {\circ}$ C到$100~ $ {\circ}$ C的温度范围内的变化率为4 ps/°C。在典型测试条件下,误码达到$10^{-15}$,峰对峰数据相关抖动(DDJ)为29.8 ps。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
6.40
自引率
7.10%
发文量
187
审稿时长
3.6 months
期刊介绍: The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society. Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels. To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.
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