A 10-bit 50-MS/s Radiation Tolerant Split Coarse/Fine SAR ADC in 65-nm CMOS

Abstract

This article presents a 10-bit radiation-hardened-by-design (RHBD) SAR analog-to-digital converter (ADC) operating at 50 MS/s, designed for aerospace applications in high-radiation environments. The system- and circuit-level redundancy techniques are implemented to mitigate radiation-induced errors and metastability. A novel split coarse/fine asynchronous SAR ADC architecture is proposed to provide system-level redundancy. At circuits level, single-event effects (SEEs) error detection and radiation-hardened techniques are implemented. Our co-designed SEE error detection scheme includes last-bit-cycle (LBC) detection following the LSB cycle and metastability detection (MD) via a ramp generator with a threshold trigger. This approach detects and corrects radiation-induced errors using a coarse/fine redundant algorithm. The radiation-hardened latch comparators and D flip-flops (DFFs) are incorporated to further mitigate SEEs. The prototype design is fabricated using TSMC 65-nm technology, with an ADC core area of 0.0875 mm² and a power consumption of 2.79 mW at a 1.2-V power supply. Postirradiation tests confirm functionality up to 100-krad(Si) total ionizing dose (TID) and demonstrate over 90% suppression of large SEE under laser testing.