{"title":"A linearized PVT-robust FVF input buffer with triode transconductance feedback achieving SFDR > 90 dB at 500-MHz input","authors":"Junye Su, Shubin Liu, Haolin Han","doi":"10.1016/j.mejo.2025.106802","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents a high-linearity input buffer leveraging triode-transconductance feedback (TTF) flipped voltage followers for RF sampling data converters. The proposed source follower incorporates a triode-biased transistor to enhance linearity by cancelling the third harmonic distortion (HD3). Under a 1-GS/s sampling rate, the buffer achieves SFDR of 90.4 dB and SNDR of 74.6 dB at Nyquist frequency. A dedicated constant-<span><math><msub><mrow><mi>g</mi></mrow><mrow><mi>m</mi></mrow></msub></math></span> current source and channel split bias circuits are also introduced in this work to accommodate process, voltage, and temperature (PVT) conditions. Simulated under 5<!--> <!-->corners, −40 to<!--> <!-->125<!--> <span><math><mrow><mo>°</mo><mi>C</mi></mrow></math></span> and 1.8<!--> <!-->V<!--> <span><math><mo>±</mo></math></span> <!--> <!-->2.5<span><math><mtext>%</mtext></math></span>, the prototype buffer designed in 28-nm CMOS maintains SFDR <span><math><mo>≥</mo></math></span> 80 dB, improved by approximately 30 dB. With a power consumption of 23.54<!--> <!-->mW, the proposed buffer attains a figure of merit (FoM) of 173.0 dB, demonstrating an excellent trade-off among linearity, bandwidth and power consumption.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"164 ","pages":"Article 106802"},"PeriodicalIF":1.9000,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125002516","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a high-linearity input buffer leveraging triode-transconductance feedback (TTF) flipped voltage followers for RF sampling data converters. The proposed source follower incorporates a triode-biased transistor to enhance linearity by cancelling the third harmonic distortion (HD3). Under a 1-GS/s sampling rate, the buffer achieves SFDR of 90.4 dB and SNDR of 74.6 dB at Nyquist frequency. A dedicated constant- current source and channel split bias circuits are also introduced in this work to accommodate process, voltage, and temperature (PVT) conditions. Simulated under 5 corners, −40 to 125 and 1.8 V 2.5, the prototype buffer designed in 28-nm CMOS maintains SFDR 80 dB, improved by approximately 30 dB. With a power consumption of 23.54 mW, the proposed buffer attains a figure of merit (FoM) of 173.0 dB, demonstrating an excellent trade-off among linearity, bandwidth and power consumption.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
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