Sina Ahadi, Victor Huang, Arman Rashidi, Simon Munyan, Michael Smith, Victor L. Quito, Peter P. Orth, Ivar Martin, Susanne Stemmer
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引用次数: 0
Abstract
Strain in epitaxial thin films can have a profound influence on their electronic bands. Here, we investigate the influence of epitaxial strains on the electronic states of (001)-oriented cadmium arsenide (Cd3As2) thin films, which are two-dimensional topological insulators. Cd3As2 films were grown coherently on Al1−xInxSb buffer layers with varying degrees of lattice mismatch to Cd3As2, producing in-plane stresses that ranged from compressive to tensile. Using magneto-transport measurements of the Landau levels of the lowest subbands, we show that films under compression remain in the two-dimensional topological insulator state, while a sufficiently large tensile stress induces a transition to a topologically trivial phase. These results qualitatively agree with expectations from theoretical models for these films. At the topological transition, the gap avoids completely closing, and we discuss possible origins.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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