{"title":"Large-area black phosphorus/perylene-3,4,9,10-tetracarboxylic dianhydride surface charge transfer doped flexible photodetector","authors":"Yue Lv , Wenlin Feng , Xiaozhan Yang , Qingliang Feng","doi":"10.1016/j.sna.2025.116903","DOIUrl":null,"url":null,"abstract":"<div><div>Flexible photodetectors have garnered significant research attention owing to their enormous application prospects in various emerging fields, such as flexible electronics, stretchable devices, implantable systems, portable devices, wearable technology, and optoelectronics. Black phosphorus (BP) with its high carrier mobility and layer-dependent bandgap tunability (0.3–2.0 eV) has emerged as a promising candidate material in the field of flexible optoelectronics. However, the preparation of BP films typically requires high-temperature and high-pressure conditions, which are often accompanied by expensive equipment, limiting their application in optoelectronics. In this study, a rapid and scalable liquid-phase interface assembly method for preparing large-area BP films is presented. Uniform films approximately 20 nm thick were fabricated, and for the first time, discrete perylene-3,4,9,10-tetracarboxylic dianhydride grains were modified through post-annealing treatment to form an organic-inorganic interfacial charge transfer doping. The entire preparation process is compatible with most rigid and flexible substrates. The resulting flexible devices demonstrate spectral response spanning 450–1550 nm with 24 ms response time, achieving a responsivity of 2.21 mA/W at 1550 nm under 7.18 mW/cm² power density. This compatible strategy bridges the gap between high-performance BP photonics and practical flexible integration.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"394 ","pages":"Article 116903"},"PeriodicalIF":4.9000,"publicationDate":"2025-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424725007095","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Flexible photodetectors have garnered significant research attention owing to their enormous application prospects in various emerging fields, such as flexible electronics, stretchable devices, implantable systems, portable devices, wearable technology, and optoelectronics. Black phosphorus (BP) with its high carrier mobility and layer-dependent bandgap tunability (0.3–2.0 eV) has emerged as a promising candidate material in the field of flexible optoelectronics. However, the preparation of BP films typically requires high-temperature and high-pressure conditions, which are often accompanied by expensive equipment, limiting their application in optoelectronics. In this study, a rapid and scalable liquid-phase interface assembly method for preparing large-area BP films is presented. Uniform films approximately 20 nm thick were fabricated, and for the first time, discrete perylene-3,4,9,10-tetracarboxylic dianhydride grains were modified through post-annealing treatment to form an organic-inorganic interfacial charge transfer doping. The entire preparation process is compatible with most rigid and flexible substrates. The resulting flexible devices demonstrate spectral response spanning 450–1550 nm with 24 ms response time, achieving a responsivity of 2.21 mA/W at 1550 nm under 7.18 mW/cm² power density. This compatible strategy bridges the gap between high-performance BP photonics and practical flexible integration.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...