Large-area black phosphorus/perylene-3,4,9,10-tetracarboxylic dianhydride surface charge transfer doped flexible photodetector

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yue Lv , Wenlin Feng , Xiaozhan Yang , Qingliang Feng
{"title":"Large-area black phosphorus/perylene-3,4,9,10-tetracarboxylic dianhydride surface charge transfer doped flexible photodetector","authors":"Yue Lv ,&nbsp;Wenlin Feng ,&nbsp;Xiaozhan Yang ,&nbsp;Qingliang Feng","doi":"10.1016/j.sna.2025.116903","DOIUrl":null,"url":null,"abstract":"<div><div>Flexible photodetectors have garnered significant research attention owing to their enormous application prospects in various emerging fields, such as flexible electronics, stretchable devices, implantable systems, portable devices, wearable technology, and optoelectronics. Black phosphorus (BP) with its high carrier mobility and layer-dependent bandgap tunability (0.3–2.0 eV) has emerged as a promising candidate material in the field of flexible optoelectronics. However, the preparation of BP films typically requires high-temperature and high-pressure conditions, which are often accompanied by expensive equipment, limiting their application in optoelectronics. In this study, a rapid and scalable liquid-phase interface assembly method for preparing large-area BP films is presented. Uniform films approximately 20 nm thick were fabricated, and for the first time, discrete perylene-3,4,9,10-tetracarboxylic dianhydride grains were modified through post-annealing treatment to form an organic-inorganic interfacial charge transfer doping. The entire preparation process is compatible with most rigid and flexible substrates. The resulting flexible devices demonstrate spectral response spanning 450–1550 nm with 24 ms response time, achieving a responsivity of 2.21 mA/W at 1550 nm under 7.18 mW/cm² power density. This compatible strategy bridges the gap between high-performance BP photonics and practical flexible integration.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"394 ","pages":"Article 116903"},"PeriodicalIF":4.9000,"publicationDate":"2025-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424725007095","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Flexible photodetectors have garnered significant research attention owing to their enormous application prospects in various emerging fields, such as flexible electronics, stretchable devices, implantable systems, portable devices, wearable technology, and optoelectronics. Black phosphorus (BP) with its high carrier mobility and layer-dependent bandgap tunability (0.3–2.0 eV) has emerged as a promising candidate material in the field of flexible optoelectronics. However, the preparation of BP films typically requires high-temperature and high-pressure conditions, which are often accompanied by expensive equipment, limiting their application in optoelectronics. In this study, a rapid and scalable liquid-phase interface assembly method for preparing large-area BP films is presented. Uniform films approximately 20 nm thick were fabricated, and for the first time, discrete perylene-3,4,9,10-tetracarboxylic dianhydride grains were modified through post-annealing treatment to form an organic-inorganic interfacial charge transfer doping. The entire preparation process is compatible with most rigid and flexible substrates. The resulting flexible devices demonstrate spectral response spanning 450–1550 nm with 24 ms response time, achieving a responsivity of 2.21 mA/W at 1550 nm under 7.18 mW/cm² power density. This compatible strategy bridges the gap between high-performance BP photonics and practical flexible integration.
大面积黑磷/苝-3,4,9,10-四羧基二酐表面电荷转移掺杂柔性光电探测器
柔性光电探测器因其在柔性电子、可伸缩器件、植入式系统、便携式器件、可穿戴技术、光电子等新兴领域的巨大应用前景而受到广泛关注。黑磷(BP)具有较高的载流子迁移率和层间带隙可调性(0.3-2.0 eV),是柔性光电子学领域中很有前途的候选材料。然而,BP薄膜的制备通常需要高温高压条件,这往往伴随着昂贵的设备,限制了它们在光电子学中的应用。在本研究中,提出了一种快速、可扩展的制备大面积BP膜的液相界面组装方法。制备了厚度约为20 nm的均匀薄膜,并首次通过后退火处理对离散的苝-3,4,9,10-四羧酸二酐颗粒进行修饰,形成有机-无机界面电荷转移掺杂。整个制备过程与大多数刚性和柔性基材兼容。该柔性器件的光谱响应范围为450-1550 nm,响应时间为24 ms,在7.18 mW/cm²功率密度下,在1550 nm处的响应率为2.21 mA/W。这种兼容策略弥合了高性能BP光子学与实际灵活集成之间的差距。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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