{"title":"A phased-array transceiver in 65 nm CMOS for 6G","authors":"Katharina Zeissler","doi":"10.1038/s41928-025-01426-x","DOIUrl":null,"url":null,"abstract":"<p>The researchers — who are based at the Institute of Science Tokyo, Panasonic Industry, Panasonic System Network R&D Lab, and Shinko Electric Industries — replace the oscillator buffer, which is typically used in such systems and has high power and chip area demands, with an injection-locked tripling phase shifter made using 65 nm node complementary metal–oxide–semiconductor (CMOS) technology. In addition to operating as a phase shifter, the device also functions as a frequency tripler. It is directly connected to the mixer to maximize the voltage amplitude and mixer input. An eight-element module with two transceiver integrated circuits, each with four transceivers, is shown to have a maximum data rate of 56 Gbps at a communication distance of 0.3 m and a 26 dBm effective radiated power at 154 GHz, while having a power consumption of up to 150 mW per element and an area of 8.4 mm × 20 mm.</p><p><b>Original reference:</b> A 150 GHz high-power-density phased-array transceiver in 65nm CMOS for 6G UE module. In <i>Proc. 2025 IEEE Symposium on VLSI Technology & Circuits</i> (2025); https://www.vlsisymposium.org/</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"12 1","pages":""},"PeriodicalIF":40.9000,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1038/s41928-025-01426-x","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The researchers — who are based at the Institute of Science Tokyo, Panasonic Industry, Panasonic System Network R&D Lab, and Shinko Electric Industries — replace the oscillator buffer, which is typically used in such systems and has high power and chip area demands, with an injection-locked tripling phase shifter made using 65 nm node complementary metal–oxide–semiconductor (CMOS) technology. In addition to operating as a phase shifter, the device also functions as a frequency tripler. It is directly connected to the mixer to maximize the voltage amplitude and mixer input. An eight-element module with two transceiver integrated circuits, each with four transceivers, is shown to have a maximum data rate of 56 Gbps at a communication distance of 0.3 m and a 26 dBm effective radiated power at 154 GHz, while having a power consumption of up to 150 mW per element and an area of 8.4 mm × 20 mm.
Original reference: A 150 GHz high-power-density phased-array transceiver in 65nm CMOS for 6G UE module. In Proc. 2025 IEEE Symposium on VLSI Technology & Circuits (2025); https://www.vlsisymposium.org/
期刊介绍:
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