Nanosheet FETs with low leakage

IF 40.9 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2025-07-22 DOI:10.1038/s41928-025-01428-9

Matthew Parker

引用次数: 0

Abstract

The researchers — who are based at TSMC Corporate Research, National Yang Ming Chiao Tung University, and the University of California, San Diego — could vary the bandgap from around 0.6 eV to 1.0 eV by using different CNT solutions. With a selected solution, nanotube nanosheet FETs were created that have nanotube pitches of around 3–4 nm and which exhibited an on-current of 900 μA μm⁻¹, leakage current of around 20 pA μm⁻¹ and a subthreshold slope of 93 mV dec⁻¹, with the leakage being around three orders of magnitude lower than previously reported nanotube FETs. In addition, the researchers calculate that if the CNT purity is further improved, n-type FETs with performance matching their p-type counterparts could be created.

Original reference: 1000× lower leakage in high-performance carbon nanotube nanosheet FETs. In Proc. 2025 IEEE Symposium on VLSI Technology & Circuits (2025); https://www.vlsisymposium.org/

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低泄漏的纳米片场效应管

来自台积电企业研究院、国立阳明交通大学和加州大学圣地亚哥分校的研究人员通过使用不同的碳纳米管解决方案，可以将带隙从0.6 eV左右改变到1.0 eV。在选定的溶液下，纳米管纳米片fet的纳米管间距约为3-4 nm，导通电流为900 μA μm−1，泄漏电流约为20 pA μm−1，亚阈值斜率为93 mV dec−1，泄漏比先前报道的纳米管fet低约3个数量级。此外，研究人员还计算出，如果碳纳米管纯度进一步提高，可以制造出性能与p型fet相当的n型fet。原始参考：高性能碳纳米管纳米片场效应管的1000x低泄漏。在Proc 2025 IEEE VLSI技术研讨会&；电路(2025);https://www.vlsisymposium.org/

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

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