Interfacial Mirror Symmetry Breaking Induced Helicity-Dependent Photocurrents in hBN/CrPS4 Heterostructure

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shanqing Li, Xiuhua Xie*, Xueyan Cui, Binghui Li, Baiqiao Huang, Wei Chen, Yuwei Shan, Zhen Cheng, Jinluo Cheng, Shichen Su, Shuangpeng Wang, Jishan Liu* and Hongyu Chen*, 
{"title":"Interfacial Mirror Symmetry Breaking Induced Helicity-Dependent Photocurrents in hBN/CrPS4 Heterostructure","authors":"Shanqing Li,&nbsp;Xiuhua Xie*,&nbsp;Xueyan Cui,&nbsp;Binghui Li,&nbsp;Baiqiao Huang,&nbsp;Wei Chen,&nbsp;Yuwei Shan,&nbsp;Zhen Cheng,&nbsp;Jinluo Cheng,&nbsp;Shichen Su,&nbsp;Shuangpeng Wang,&nbsp;Jishan Liu* and Hongyu Chen*,&nbsp;","doi":"10.1021/acsami.5c08396","DOIUrl":null,"url":null,"abstract":"<p >Research on quantum geometric-related effects in antiferromagnetic van der Waals heterostructures has predominantly focused on separating the contributions of Berry curvature and quantum metric through the manipulation of Parity-Time (PT) symmetry. However, the critical role of interfacial symmetry-breaking mechanisms, particularly those emerging from parity inversion symmetry manipulation, has remained underexplored. This study advances the field by investigating the hBN/CrPS<sub>4</sub> heterojunction, where the mirror symmetry at the interface is systematically controlled. A significant circular photogalvanic effect is induced through the breaking of mirror symmetry, as evidenced by helicity-dependent photocurrent measurements. Symmetry analysis reveals that the observed difference in left- and right-handed circular photocurrents originates from a Berry curvature dipole, which is directly linked to the broken mirror symmetry. Our research highlights the critical role of interface symmetry breaking in inducing quantum geometric-related effects at magnetic material interfaces and pioneers a new strategy for manipulating interface PT symmetry.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"17 30","pages":"43799–43807"},"PeriodicalIF":8.2000,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsami.5c08396","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Research on quantum geometric-related effects in antiferromagnetic van der Waals heterostructures has predominantly focused on separating the contributions of Berry curvature and quantum metric through the manipulation of Parity-Time (PT) symmetry. However, the critical role of interfacial symmetry-breaking mechanisms, particularly those emerging from parity inversion symmetry manipulation, has remained underexplored. This study advances the field by investigating the hBN/CrPS4 heterojunction, where the mirror symmetry at the interface is systematically controlled. A significant circular photogalvanic effect is induced through the breaking of mirror symmetry, as evidenced by helicity-dependent photocurrent measurements. Symmetry analysis reveals that the observed difference in left- and right-handed circular photocurrents originates from a Berry curvature dipole, which is directly linked to the broken mirror symmetry. Our research highlights the critical role of interface symmetry breaking in inducing quantum geometric-related effects at magnetic material interfaces and pioneers a new strategy for manipulating interface PT symmetry.

Abstract Image

hBN/CrPS4异质结构中界面镜对称性破缺诱导螺旋相关光电流。
反铁磁范德华异质结构中量子几何相关效应的研究主要集中在通过操纵奇偶时间(PT)对称来分离Berry曲率和量子度量的贡献。然而,界面对称性破缺机制的关键作用,特别是那些从宇称反转对称操作中出现的机制,仍然没有得到充分的探索。本研究通过研究hBN/CrPS4异质结来推进该领域,其中界面的镜像对称性是系统控制的。一个显著的圆形光电效应是诱导通过打破镜面对称,证明了由螺旋依赖的光电流测量。对称性分析表明,观测到的左旋和右旋圆形光电流的差异源于贝里曲率偶极子,它与镜像对称性的破坏直接相关。我们的研究强调了界面对称性破缺在磁性材料界面诱导量子几何相关效应中的关键作用,并开创了一种操纵界面PT对称性的新策略。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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