Hollow silica coated CsPbBr3 quantum dots facilitate large-scale synthesis and application of anti-counterfeiting ink

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Applied Surface Science Pub Date : 2025-07-19 DOI:10.1016/j.apsusc.2025.164106

Shengnan Li , Jingyi Liu , Jinkun Chen , Haoze Yu , Cuibing Bai , Fei Ma , Qingmei Guan , Lin Zhang

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Abstract

Metal CsPbBr₃ quantum dots have rapidly become a research focus in the field of optoelectronics due to their excellent optoelectronic properties. However, CsPbBr₃ quantum dots are prone to lattice decomposition and fluorescence quenching under external environmental factors such as humidity, oxygen, temperature, and light, which limits their applications. In this work, a simple aqueous solution method was proposed to embed CsPbBr₃ quantum dots into hollow silica (H-SiO₂) microspheres. H-SiO₂ provides a large growth space for CsPbBr₃ quantum dots, which are firmly attached to the interior of the H-SiO₂ shell through physical effect. CsPbBr₃ quantum dots composite with H-SiO₂ exhibit stable luminescent properties under high temperature (140 °C), humidity (water), and long-term storage conditions. Finally, prepare it into anti-counterfeiting ink to broaden its applications in displays and commerce.

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空心硅包覆CsPbBr3量子点有利于防伪油墨的大规模合成和应用

金属CsPbBr3量子点因其优异的光电性能而迅速成为光电子学领域的研究热点。然而，CsPbBr3量子点在湿度、氧气、温度、光照等外界环境因素下容易发生晶格分解和荧光猝灭，限制了其应用。本文提出了一种简单的水溶液方法将CsPbBr3量子点嵌入空心二氧化硅（H-SiO2）微球中。H-SiO2为CsPbBr3量子点提供了较大的生长空间，CsPbBr3量子点通过物理效应牢固地附着在H-SiO2壳层内部。含H-SiO2的CsPbBr3量子点复合材料在高温（140 °C）、高湿度（水）和长期储存条件下均表现出稳定的发光性能。最后，将其制备成防伪油墨，以扩大其在展示和商业中的应用。

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来源期刊

Applied Surface Science 工程技术-材料科学：膜

CiteScore

12.50

自引率

7.50%

发文量

3393

审稿时长

67 days

期刊介绍： Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.