Influence of Gallium Focused Ion Beam on Polyethylene: Study of Molecular Damage.

Abstract

Focused ion beam-scanning electron microscopy (FIB-SEM) is a microscopy technique that can be used to investigate the quality and structural properties of industrial materials such as polyolefins. An understudied aspect and possible drawback of the technique could be the implantation of the impinging ions under the sample surface and damage to the molecular structure, hindering its use as a sample preparation tool for surface-sensitive techniques. We systematically investigated the damaging effects of gallium liquid metal focused ion beam under grazing incident beam angle and various accelerating voltages on polyethylene. Changes in molecular structure and ion implantation depth were analyzed with Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiling and optical profilometry. Our results show that the gallium ion beam causes significant damage to the polyolefin structure, which is especially observed as dehydrogenation of the molecular structure of the (sub)surface. These molecular products are concentrated in distinct sub-surface zones, where damage is coupled to the presence of implanted gallium from the FIB etching.