Qi Lin, Hannaneh Karimi, Daniel J. Herrera, Ellie Wang, Seth R. Bank, Joe. C. Campbell
{"title":"A passivation study for AlInAsSb avalanche photodiodes","authors":"Qi Lin, Hannaneh Karimi, Daniel J. Herrera, Ellie Wang, Seth R. Bank, Joe. C. Campbell","doi":"10.1063/5.0278018","DOIUrl":null,"url":null,"abstract":"Avalanche photodiodes (APDs) are vital for a wide range of commercial, military, and research applications. Recently, the AlxIn1–xAsySb1–y digital alloy system has emerged as a promising material for next-generation APDs, offering a broadly tunable bandgap, high avalanche gain, and low excess noise. However, surface oxidation and defect formation on the etched Al0.7InAsSb sidewalls of mesa-structure devices can significantly increase device dark currents, degrade the signal-to-noise ratio, and limit device reliability. Effective surface passivation is thus essential for suppressing dark current and enhancing device performance. In this study, we systematically compare the impact of different passivation techniques, including SU-8 polymer, atomic layer deposition (ALD)-HfO2, and ALD-Al2O3, deposited at various temperatures, on the performance of Al0.7InAsSb p–i–n APDs grown on InP substrates. Our results demonstrate that ALD-Al2O3 passivation at 150 °C achieves the most substantial reduction in dark current, increased breakdown voltage, and better thermal stability during heat exposure. This work provides valuable insights into developing high-performance, low-noise APDs suitable for demanding and commercially relevant optoelectronic applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"109 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0278018","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
Avalanche photodiodes (APDs) are vital for a wide range of commercial, military, and research applications. Recently, the AlxIn1–xAsySb1–y digital alloy system has emerged as a promising material for next-generation APDs, offering a broadly tunable bandgap, high avalanche gain, and low excess noise. However, surface oxidation and defect formation on the etched Al0.7InAsSb sidewalls of mesa-structure devices can significantly increase device dark currents, degrade the signal-to-noise ratio, and limit device reliability. Effective surface passivation is thus essential for suppressing dark current and enhancing device performance. In this study, we systematically compare the impact of different passivation techniques, including SU-8 polymer, atomic layer deposition (ALD)-HfO2, and ALD-Al2O3, deposited at various temperatures, on the performance of Al0.7InAsSb p–i–n APDs grown on InP substrates. Our results demonstrate that ALD-Al2O3 passivation at 150 °C achieves the most substantial reduction in dark current, increased breakdown voltage, and better thermal stability during heat exposure. This work provides valuable insights into developing high-performance, low-noise APDs suitable for demanding and commercially relevant optoelectronic applications.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
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Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.