Construction of Hollow H-CuS/NiS2@CuS S-Scheme Heterostructure Photocatalyst with an Excellent Hydrogen Evolution Performance

ChemistryEurope Pub Date : 2025-05-30 DOI:10.1002/ceur.202500073

Tao Zhou, Junzi Li, Xu Han, Yingyu Song, Menglong Liu, Jialiang Liu, Wen-Wen He, Thamraa AlShahrani, Shengqian Ma

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Abstract

Heterojunction engineering is regarded as one of the most efficacious means to enhance the hydrogen evolution performance of photocatalysts. In this research, bimetal MOF-74 is grown on hollow Cu₇S₄, and after vulcanization, H-CuS/NiS₂@CuS is obtained to form heterostructures. The experimental results indicate that the synthesized H-CuS/NiS₂@CuS has an outstanding photocatalytic hydrogen evolution rate of 17.66 mmol g⁻¹ h⁻¹, and its photocatalytic hydrogen evolution performance is much higher than that of single transition metal sulfide. Within the S-scheme heterojunction, the interfacial electric field causes a significant accumulation of photoelectrons on the conduction band of NiS₂. Thus, it can maintain a high reducing property in the hydrogen evolution reaction and remarkably boosts the separation efficiency of photoelectrons and holes. This research offers a feasible scheme for the synthesis of highly efficient heterojunction photocatalysts.

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具有优异析氢性能的空心h - cu /NiS2@CuS s型异质结构光催化剂的构建

异质结工程被认为是提高光催化剂析氢性能的有效手段之一。本研究将双金属MOF-74生长在空心Cu7S4上，硫化后得到h - cu /NiS2@CuS形成异质结构。实验结果表明，合成的h - cu /NiS2@CuS具有出色的光催化析氢速率，为17.66 mmol g−1 h−1，其光催化析氢性能远高于单一过渡金属硫化物。在s型异质结中，界面电场导致NiS2导带上光电子的显著积累。从而在析氢反应中保持较高的还原性，显著提高光电子与空穴的分离效率。本研究为合成高效异质结光催化剂提供了一种可行的方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ChemistryEurope

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