Unveiling charge-trapping storage capacity in MoS2/BiFeO3 heterostructure

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-07-14 DOI:10.1063/5.0276993

Yi Xia, Yuchun Chen, Gulnigar Ablat, Yuchao Zhang, Yanlin Tao, Li Zhang, Lijie Zhang, Long-Jing Yin, Jian Sun, Yifan Yao, Yuan Tian, Zhihui Qin

{"title":"Unveiling charge-trapping storage capacity in MoS2/BiFeO3 heterostructure","authors":"Yi Xia, Yuchun Chen, Gulnigar Ablat, Yuchao Zhang, Yanlin Tao, Li Zhang, Lijie Zhang, Long-Jing Yin, Jian Sun, Yifan Yao, Yuan Tian, Zhihui Qin","doi":"10.1063/5.0276993","DOIUrl":null,"url":null,"abstract":"Charge-trapping memory emerges as one of the prime candidates for nonvolatile memory architectures, yet the empirical selection of charge storage media demands further investigation. Leveraging the inherent oxygen vacancy-mediated trapping mechanism, ferroelectric BiFeO3 (BFO) enables a tunable charge confinement. Herein, through an improved sol-gel method, the preparation protocol of BFO was rigorously engineered, enabling realization of centimeter-scale crystalline films on SiO2/Si substrates. Integrating BFO with two-dimensional van der Waals semiconductor MoS2, we constructed a heterostructure-based charge-trapping memory featuring enhanced retention and scalable integration. The device exhibits a maximum memory window of ∼90 V, an ON/OFF current ratio of ∼105, and a write–erase current ratio of ∼103. With a saturation storage capacity of up to 1013 cm−2 and the well-defined charge retention mechanism, the MoS2/BFO heterostructure also mimics biological synaptic behaviors, offering alternative prospects for BFO-based memories and neuromorphic computing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0276993","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

Charge-trapping memory emerges as one of the prime candidates for nonvolatile memory architectures, yet the empirical selection of charge storage media demands further investigation. Leveraging the inherent oxygen vacancy-mediated trapping mechanism, ferroelectric BiFeO3 (BFO) enables a tunable charge confinement. Herein, through an improved sol-gel method, the preparation protocol of BFO was rigorously engineered, enabling realization of centimeter-scale crystalline films on SiO2/Si substrates. Integrating BFO with two-dimensional van der Waals semiconductor MoS2, we constructed a heterostructure-based charge-trapping memory featuring enhanced retention and scalable integration. The device exhibits a maximum memory window of ∼90 V, an ON/OFF current ratio of ∼105, and a write–erase current ratio of ∼103. With a saturation storage capacity of up to 1013 cm−2 and the well-defined charge retention mechanism, the MoS2/BFO heterostructure also mimics biological synaptic behaviors, offering alternative prospects for BFO-based memories and neuromorphic computing.

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揭示MoS2/BiFeO3异质结构中的电荷俘获存储能力

电荷捕获存储器成为非易失性存储器结构的主要候选之一，但电荷存储介质的经验选择需要进一步研究。利用固有的氧空位介导的捕获机制，铁电BiFeO3 （BFO）实现了可调的电荷约束。本文通过改进的溶胶-凝胶法，对BFO的制备工艺进行了严格的设计，从而在SiO2/Si衬底上实现了厘米级的结晶膜。将BFO与二维范德华半导体MoS2集成，构建了基于异质结构的电荷捕获存储器，具有增强的保留性和可扩展性集成。该器件的最大内存窗口为~ 90v， ON/OFF电流比为~ 105，write-erase电流比为~ 103。MoS2/BFO异质结构具有高达1013 cm−2的饱和存储容量和明确的电荷保留机制，还可以模拟生物突触行为，为基于BFO的记忆和神经形态计算提供了替代前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.