Ultra-near-surface gallium-activated 435 nm luminescence from donor-acceptor-pair recombination in ion-beam implanted 4H-SiC

IF 3.8 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2025-07-12 DOI:10.1016/j.vacuum.2025.114577

Zhimin Gao , Zimo Ji , Tingwei Zhang , Adrian Kitai

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引用次数: 0

Abstract

Nitrogen and gallium-doped SiC and its luminescence properties are investigated in detail. Spatially highly localized gallium doping is realized by ion implanting Ga into n-type 4H SiC using an ion milling tool for the first time. A nanoscale depth region of Ga-rich SiC is formed near the SiC surface, followed by 1600 °C activation annealing. An AlN capping layer is used to avoid the out-diffusion of Ga, stabilize the SiC surface, and serve as an additional source of N dopant. An emission spectrum with a peak wavelength of approximately 435 nm at room temperature is identified and confirmed to be due to Ga-N donor-acceptor-pair recombination. Photoluminescence, cathodoluminescence, SEM and TEM results are presented. It is thereby shown that the more conventional p-type dopant Al can be replaced by Ga, enabling high-intensity Taylor cone gallium ion sources to achieve highly spatially controlled donor-acceptor pair emission from SiC. Several aspects of the relevance of spatially localized donor-acceptor pair emission are described.

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离子束注入4H-SiC中供体-受体-对复合的超近表面镓激活435 nm发光

详细研究了氮、镓掺杂碳化硅及其发光性能。首次利用离子铣削工具在n型4H碳化硅中离子注入镓，实现了空间高度局域化镓掺杂。经过1600℃活化退火，在SiC表面附近形成了一个纳米级的富ga SiC深度区。AlN封盖层用于防止Ga向外扩散，稳定SiC表面，并作为N掺杂剂的额外来源。在室温下的峰值波长约为435 nm的发射光谱被识别并确认是由于Ga-N给体-受体对重组。给出了光致发光、阴极发光、扫描电镜和透射电镜结果。由此表明，更传统的p型掺杂物Al可以被Ga取代，从而使高强度泰勒锥镓离子源能够从SiC中实现高度空间控制的供体-受体对发射。几个方面的相关性的空间定位供体-受体对发射的描述。

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.