Yonggang Liu , Zerui Wang , Xinyu Zhang , Chunyan Yang , Heng Zhang , Zixiang Zhang , Yanfu Wan , Xiaojuan Xu , Junfeng Tong , Jianfeng Li
{"title":"Room temperature rubidium–doping strategies for high–luminance perovskite quantum dot light emitting diodes","authors":"Yonggang Liu , Zerui Wang , Xinyu Zhang , Chunyan Yang , Heng Zhang , Zixiang Zhang , Yanfu Wan , Xiaojuan Xu , Junfeng Tong , Jianfeng Li","doi":"10.1016/j.jlumin.2025.121404","DOIUrl":null,"url":null,"abstract":"<div><div>Perovskite quantum dots (PQDs) are renowned for their exceptional optoelectronic properties, yet their practical application is severely hindered by rapid degradation under humid and thermal conditions. In this study, we address this critical issue through a room-temperature Rb<sup>+</sup> ion lattice doping strategy, which synergistically optimizes the performance of CsPbBr<sub>3</sub> QDs via defect passivation and carrier dynamics modulation. Our experimental results demonstrate that Rb <sup>+</sup> doping not only tailors the bandgap of CsPbBr<sub>3</sub> QDs to the range of 2.40–2.44 eV through band engineering but also significantly enhances the photoluminescence quantum yield from 77.18 % to 90.31 %. Moreover, it dramatically improves the environmental tolerance and thermal stability of the QDs. Kinetic analysis reveals that the exciton recombination lifetime in the modified PQDs is extended threefold to 17.27 ns (3.4 -fold longer than that of pristine PQDs), confirming a substantial reduction in defect density. Based on the Rb <sup>+</sup> doped CsPbBr<sub>3</sub> QDs, we constructed green perovskite quantum dot light-emitting diodes (PQLEDs) that exhibit breakthrough performance, achieving a maximum luminance of 82,740 cd m<sup>−2</sup>, which is among the highest reported values for A-site-doped systems. The external quantum efficiency (EQE) and current efficiency of these PQLEDs are 7.7 % and 26.28 cd A<sup>−1</sup>, respectively, which are 1.9 times and 1.7 times higher than those of the control group. This work establishes a novel doping engineering paradigm that effectively overcomes the stability barriers in perovskite optoelectronics.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"286 ","pages":"Article 121404"},"PeriodicalIF":3.6000,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Luminescence","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022231325003448","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
Perovskite quantum dots (PQDs) are renowned for their exceptional optoelectronic properties, yet their practical application is severely hindered by rapid degradation under humid and thermal conditions. In this study, we address this critical issue through a room-temperature Rb+ ion lattice doping strategy, which synergistically optimizes the performance of CsPbBr3 QDs via defect passivation and carrier dynamics modulation. Our experimental results demonstrate that Rb + doping not only tailors the bandgap of CsPbBr3 QDs to the range of 2.40–2.44 eV through band engineering but also significantly enhances the photoluminescence quantum yield from 77.18 % to 90.31 %. Moreover, it dramatically improves the environmental tolerance and thermal stability of the QDs. Kinetic analysis reveals that the exciton recombination lifetime in the modified PQDs is extended threefold to 17.27 ns (3.4 -fold longer than that of pristine PQDs), confirming a substantial reduction in defect density. Based on the Rb + doped CsPbBr3 QDs, we constructed green perovskite quantum dot light-emitting diodes (PQLEDs) that exhibit breakthrough performance, achieving a maximum luminance of 82,740 cd m−2, which is among the highest reported values for A-site-doped systems. The external quantum efficiency (EQE) and current efficiency of these PQLEDs are 7.7 % and 26.28 cd A−1, respectively, which are 1.9 times and 1.7 times higher than those of the control group. This work establishes a novel doping engineering paradigm that effectively overcomes the stability barriers in perovskite optoelectronics.
期刊介绍:
The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid.
We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.