Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

Abstract

In this work, electrically binary and ternary reconfigurable complementary metal‐oxide‐semiconductor (T‐CMOS) inverter that achieves stable multivalued logic (MVL) is presented. The device is realized through vertical integration of chemical vapor deposition‐grown MoS2 n‐channel and WSe2 p‐channel metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) in a complementary FETs (CFETs) configuration, combined with a gate‐tunable MoS₂ resistive element that enables a well‐defined intermediate logic state via constant‐current operation. The unique combination of vertically stacked 2D MOSFETs and an electrically tunable resistive element allows for precise control over the voltage transfer characteristic and dynamic switching between binary and ternary modes. Furthermore, these T‐CMOS inverters are integrated in large‐scale to demonstrate ternary logic gates, including NAND (NMIN) and NOR (NMAX), thereby validating the scalability and potential for compact and energy‐efficient MVL circuits.