{"title":"Hydrogen-free oxide thin-film transistor toward resolving hydrogen-associated instability","authors":"Mamoru Furuta, Mir Mutakabbir Alom, Motoki Ando, Yoshihiro Sato, Takafumi Kambe, Tsutomu Satoyoshi","doi":"10.1002/jsid.2084","DOIUrl":null,"url":null,"abstract":"<p>We propose and demonstrate the concept of hydrogen-free (H-free) amorphous oxide semiconductor thin-film transistors (AOS TFTs) to resolve hydrogen-associated instability of TFT. H-free SiO<sub>2</sub> and SiN<sub>x</sub> films were successfully deposited by large-area inductively coupled plasma chemical vapor deposition (ICP-CVD) using hydrogen-free source gases. H-free SiO<sub>2</sub> and SiN<sub>x</sub> films were applied as the gate insulator and passivation layers of the TFT, respectively. The H-free In–Ga–Zn–Sn–O (IGZTO) TFT exhibited field-effect mobility of 23.2 cm<sup>2</sup>V<sup>−1</sup> s<sup>−1</sup> and excellent stability under positive gate bias stresses for 7,200 s at stress temperatures in the range of 60–100°C.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"33 5","pages":"582-593"},"PeriodicalIF":2.2000,"publicationDate":"2025-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Society for Information Display","FirstCategoryId":"5","ListUrlMain":"https://sid.onlinelibrary.wiley.com/doi/10.1002/jsid.2084","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We propose and demonstrate the concept of hydrogen-free (H-free) amorphous oxide semiconductor thin-film transistors (AOS TFTs) to resolve hydrogen-associated instability of TFT. H-free SiO2 and SiNx films were successfully deposited by large-area inductively coupled plasma chemical vapor deposition (ICP-CVD) using hydrogen-free source gases. H-free SiO2 and SiNx films were applied as the gate insulator and passivation layers of the TFT, respectively. The H-free In–Ga–Zn–Sn–O (IGZTO) TFT exhibited field-effect mobility of 23.2 cm2V−1 s−1 and excellent stability under positive gate bias stresses for 7,200 s at stress temperatures in the range of 60–100°C.
我们提出并演示了无氢（H-free）非晶氧化物半导体薄膜晶体管（AOS TFTs）的概念，以解决TFT的氢相关不稳定性。采用大面积电感耦合等离子体化学气相沉积（ICP-CVD）技术，采用无氢源气体制备了无h SiO2和SiNx薄膜。采用无h SiO2和SiNx薄膜分别作为TFT的栅绝缘层和钝化层。无h in - ga - zn - sn - o (IGZTO) TFT的场效应迁移率为23.2 cm2V−1 s−1，在60-100°C的正栅偏置应力下，稳定性为7200 s。
期刊介绍：
The Journal of the Society for Information Display publishes original works dealing with the theory and practice of information display. Coverage includes materials, devices and systems; the underlying chemistry, physics, physiology and psychology; measurement techniques, manufacturing technologies; and all aspects of the interaction between equipment and its users. Review articles are also published in all of these areas. Occasional special issues or sections consist of collections of papers on specific topical areas or collections of full length papers based in part on oral or poster presentations given at SID sponsored conferences.
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