Time resolution limits in silicon sensors from Landau fluctuations and electronics noise

Abstract

In this report, we derive analytical expressions for the time resolution limits of standard silicon sensors, LGADs, and 3D trench sensors. We separately examine the effects of Landau fluctuations and electronic noise. To analyze Landau fluctuations, we relate the time resolution of a single electron–hole pair generated at a random position in the sensor to the time resolution associated with the full ionization pattern produced by a charged particle. For electronic noise, we explore optimal filtering techniques that minimize its impact on time resolution, and evaluate how closely these can be approximated by practical filters. Finally, we demonstrate that the combined effect of Landau fluctuations and electronic noise cannot, in general, be simply expressed as the quadratic sum of the individual contributions.