Tailoring thermoelectric properties of SnSe2 via layered composite formation with Bi2Se3

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-07-11 DOI:10.1016/j.mseb.2025.118604

Thi Huong Nguyen , Anh Tuan Pham , Van Quang Nguyen , Van Thiet Duong , Sudong Park , Sunglae Cho , Anh Tuan Duong

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引用次数: 0

Abstract

In this study, the SnSe₂-Bi₂Se₃ layered composite crystals were successfully fabricated using a temperature gradient technique. The crystal structures were confirmed by X-ray diffraction, which revealed that SnSe₂ and Bi₂Se₃ phases coexisted in a macroscopic lamellar morphology in the composite crystals. The effect of Bi₂Se₃ content on the thermoelectric properties of SnSe₂ was systematically investigated in the temperature range of 300 – 623 K. Compared to pristine SnSe₂, the n-type composite samples showed a notable increase in the electrical conductivity and a significant reduction in the thermal conductivity, which is likely attributed to enhanced phonon scattering at heterogeneous interfaces. However, the Seebeck coefficient decreased, leading to a lower

ZT

value than that of the pristine SnSe₂. These results indicate that forming a layered composite with Bi₂Se₃ is a potential way to improve specific thermoelectric parameters of SnSe₂, though further optimization is required to enhance performance.

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通过与Bi2Se3形成层状复合材料调整SnSe2的热电性能

在本研究中，利用温度梯度技术成功制备了SnSe2-Bi2Se3层状复合晶体。x射线衍射结果表明，复合晶体中SnSe2和Bi2Se3相以宏观层状形态共存。在300 ~ 623 K的温度范围内系统地研究了Bi2Se3含量对SnSe2热电性能的影响。与原始SnSe2相比，n型复合样品的电导率显著提高，导热系数显著降低，这可能是由于非均相界面声子散射增强所致。然而，Seebeck系数减小，导致ZT值低于原始SnSe2。这些结果表明，与Bi2Se3形成层状复合材料是改善SnSe2特定热电参数的潜在方法，但需要进一步优化以提高性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.