Covalently Doped and Highly Oriented Covalent Organic Framework Thin Films

IF 16 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
ACS Nano Pub Date : 2025-07-10 DOI:10.1021/acsnano.5c03065
Dayanni D. Bhagwandin, Brian M. Everhart, Kirt A. Page, Michael A. Altvater, Yao Yao, Rahul Rao, Kara Martin, Krishnamurthy Mahalingam, Cheri Hampton, Jonathan Ludwick, Griffin Roberts, Drake Austin, Md Sherajul Islam, Ly Tran, Arthur R. Woll, Lawrence F. Drummy, Ajit K. Roy, Tobin J. Marks, Antonio Facchetti, Tyson Back, Hilmar Koerner, Luke A. Baldwin and Nicholas R. Glavin*, 
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引用次数: 0

Abstract

Strict control of both crystallographic orientation and band structure is crucial in realizing future high performing semiconducting microelectronic devices based on 2D covalent organic frameworks (COFs). Due to the insoluble nature from extensive aromaticity, processing of these materials into well-ordered, highly crystalline thin films presents a great challenge. In this work, a strategy to enable controlled covalent doping of imine COF thin films with thiophene linkers is presented. By incorporating different aldehyde ratios of terephthalaldehyde (PDA) and 2,5-thiophenedicarboxaldehyde (TDA) with 1,3,5-tris(4-aminophenyl)benzene (TAPB) in a liquid–solid synthesis approach, a series of highly crystalline and uniformly oriented TAPB-PDA-TDA COF thin films with varying percentages of TDA linkers incorporated into the framework were obtained. In this case, incorporation of thiophene linkers up to 20% resulted in minimal disruption of the long-range crystallographic ordering. Moreover, a small amount of thiophene molecules covalently doped into the highly ordered structure results in a small reduction in the band gap and a corresponding increase in the work function and decrease in the valence band maximum, effectively behaving like a p-type dopant in conventional semiconductors. The covalently doped thiophene unit is shown to increase the π-conjugation through enhanced crystallinity in the framework, improving the electron delocalization in the structure.

Abstract Image

共价掺杂和高取向共价有机骨架薄膜。
严格控制晶体取向和能带结构是实现基于二维共价有机框架(COFs)的高性能半导体微电子器件的关键。由于广泛芳香性的不溶性,将这些材料加工成有序、高结晶的薄膜是一个很大的挑战。在这项工作中,提出了一种策略,使亚胺COF薄膜与噻吩连接物的共价掺杂控制。将不同醛比的对苯二醛(PDA)和2,5-噻吩二甲醛(TDA)与1,3,5-三(4-氨基苯基)苯(TAPB)在液-固合成法中掺入不同比例的TDA连接剂,得到了一系列高结晶、取向均匀的TAPB-PDA-TDA复合薄膜。在这种情况下,加入高达20%的噻吩连接剂导致远程晶体有序的最小破坏。此外,少量的噻吩分子共价掺杂到高有序结构中,导致带隙的小幅减小,相应的功函数增加,价带最大值减小,有效地表现为常规半导体中的p型掺杂剂。共价掺杂的噻吩单元通过增强骨架的结晶度提高了π共轭,改善了结构中的电子离域。
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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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