{"title":"Enhancement of resistive switching properties in RRAM with AlN-Al2O3 bilayer structure","authors":"Jinshan He, Xiaoling Duan, Dong Wang, Jiangcheng Wu, Zhihong Liu, Tao Zhang, Yue Hao, Jincheng Zhang","doi":"10.1063/5.0262592","DOIUrl":null,"url":null,"abstract":"This study presents the fabrication process and bipolar resistive switching behavior of an Au/Al/AlN/Al2O3/Pt/Ti random-access memory device. The proposed device, incorporating a thin Al2O3 layer between the AlN resistive switching layer and the Pt bottom electrode, exhibits enhanced resistive switching performance. Specifically, the device demonstrates improved endurance, with the number of switching cycles increasing from 122 to 2791, and a higher switching resistance ratio, with the maximum on/off ratio rising from 105 to 108. The enhanced switching stability originates from the inserted Al2O3 layer enabling precise control over conductive filament rupture locations. This spatial regulation yields more stable resistive switching behavior, which is a critical requirement for nonvolatile memory applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0262592","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
This study presents the fabrication process and bipolar resistive switching behavior of an Au/Al/AlN/Al2O3/Pt/Ti random-access memory device. The proposed device, incorporating a thin Al2O3 layer between the AlN resistive switching layer and the Pt bottom electrode, exhibits enhanced resistive switching performance. Specifically, the device demonstrates improved endurance, with the number of switching cycles increasing from 122 to 2791, and a higher switching resistance ratio, with the maximum on/off ratio rising from 105 to 108. The enhanced switching stability originates from the inserted Al2O3 layer enabling precise control over conductive filament rupture locations. This spatial regulation yields more stable resistive switching behavior, which is a critical requirement for nonvolatile memory applications.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.