Pulse laser deposition prepared tin(IV) oxide thin films: effects of gamma radiation doses on their structural and optical characteristics

IF 1.4 4区化学 Q4 CHEMISTRY, INORGANIC & NUCLEAR

Phosphorus, Sulfur, and Silicon and the Related Elements Pub Date : 2025-07-03 DOI:10.1080/10426507.2025.2519510

Noha H. Harb (Conceptualization) , Hiba Al-Hameed (Investigation) , Baydaa Taher Sih (Supervision) , Falah A-H. Mutlak (Writing – original draft Writing – review & editing)

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引用次数: 0

Abstract

This work studied the effects of gamma radiation on the structural and optical properties of SnO₂ thin films in a dose-dependent manner. The microstructural change was confirmed by peak shifting, peak broadening, and changes in grain size with an increase in radiation dose, as observed from X-ray diffraction analysis. Changes in the intensity of photoluminescence spectra and optical properties are due to radiation-induced defect states. The obtained results indicate that gamma irradiation can be used to tailor the characteristics of SnO₂ for various applications. In contrast to previous works, this study quantitatively connects radiation dose to structural and optical transformations, thereby addressing the fundamental mechanisms of defect formation.

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脉冲激光沉积制备氧化锡薄膜：γ辐射剂量对其结构和光学特性的影响

本文研究了γ辐射对SnO2薄膜结构和光学性质的剂量依赖性影响。x射线衍射分析表明，随着辐照剂量的增加，材料的峰移、峰展宽和晶粒尺寸发生了变化。光致发光光谱强度和光学性质的变化是由于辐射引起的缺陷态。得到的结果表明，伽马辐射可以用于定制SnO2的各种应用特性。与以往的工作相比，本研究定量地将辐射剂量与结构和光转换联系起来，从而解决了缺陷形成的基本机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Phosphorus, Sulfur, and Silicon and the Related Elements 化学-无机化学与核化学

CiteScore

2.60

自引率

7.70%

发文量

103

审稿时长

2.1 months

期刊介绍： Phosphorus, Sulfur, and Silicon and the Related Elements is a monthly publication intended to disseminate current trends and novel methods to those working in the broad and interdisciplinary field of heteroatom chemistry.