A 203-to-250GHz Staggered-Tuning Amplifier in 0.13-μm SiGe Technology

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Xin Zhang;Zhiheng Liu;Fanyi Meng
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引用次数: 0

Abstract

An ultra-wideband four-stage 220GHz amplifier in a 0.13- $\mu $ m SiGe BiCMOS technology is proposed in this letter. The cascode topology is deployed as a unit amplifier to provide sufficient power gain. To broaden the bandwidth, the staggered-tuning model for the cascode amplifier is studied, analyzed, and applied in the amplifier design. The fabricated circuit achieves a peak gain of 15.5 dB at 210GHz, a 3-dB bandwidth of 47GHz, an output $P_{\text {1 dB}}$ of −9.7 dBm at 220GHz. The amplifier occupies a compact area of 0.154 mm2. The dc power consumption is 20.4mW at 2.4 V supply voltage.
基于0.13 μm SiGe技术的203- 250ghz交错调谐放大器
本文提出了一种采用0.13- $\mu $ m SiGe BiCMOS技术的超宽带4级220GHz放大器。级联码拓扑作为单元放大器部署,以提供足够的功率增益。为了拓宽带宽,对级联放大器的交错调谐模型进行了研究、分析,并将其应用于放大器设计中。该电路在210GHz时峰值增益为15.5 dB, 3db带宽为47GHz, 220GHz时输出$P_{\text {1 dB}}$为- 9.7 dBm。放大器占用0.154平方毫米的紧凑面积。在2.4 V供电电压下,直流功耗为20.4mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
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