{"title":"A 232–282 GHz Frequency Quadrupler in 130-nm SiGe HBT SG13G3Cu Technology","authors":"Boli Peng;Michael Schröter","doi":"10.1109/LMWT.2025.3557327","DOIUrl":null,"url":null,"abstract":"A 232–282 frequency quadrupler has been designed and fabricated using Leibniz Institute for High Performance Microelectronics (IHP’s) highest performance 130-nm SiGe BiCMOS technology, featuring <inline-formula> <tex-math>$f_{T}$ </tex-math></inline-formula>/<inline-formula> <tex-math>$f_{\\text {MAX}}$ </tex-math></inline-formula> values of 470/650 GHz. It consists of stacked Gilbert-cell (GC) doublers, with neutralization capacitances in the transconductance pair to enhance conversion gain (CG), and a miniaturized balun structure for the low frequency differential input signal generation. The frequency quadrupler achieves a peak output power of –4.5dBm, corresponding to a 3.5 dB CG at 236 GHz, with a 0.56% dc-to-RF efficiency and a 3 dB bandwidth of 50 GHz ranging from 232 to 282 GHz. This performance is realized with a dc power consumption of only 63 mW and a chip area of 0.49 mm<sup>2</sup>.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1045-1048"},"PeriodicalIF":3.4000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10978892/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A 232–282 frequency quadrupler has been designed and fabricated using Leibniz Institute for High Performance Microelectronics (IHP’s) highest performance 130-nm SiGe BiCMOS technology, featuring $f_{T}$ /$f_{\text {MAX}}$ values of 470/650 GHz. It consists of stacked Gilbert-cell (GC) doublers, with neutralization capacitances in the transconductance pair to enhance conversion gain (CG), and a miniaturized balun structure for the low frequency differential input signal generation. The frequency quadrupler achieves a peak output power of –4.5dBm, corresponding to a 3.5 dB CG at 236 GHz, with a 0.56% dc-to-RF efficiency and a 3 dB bandwidth of 50 GHz ranging from 232 to 282 GHz. This performance is realized with a dc power consumption of only 63 mW and a chip area of 0.49 mm2.
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