Increasing the sensitivity of a non-chemically amplified molecular resist by cascade esterification†

Huining Wang, Jinping Chen, Yi Zeng, Tianjun Yu, Shuangqing Wang, Xudong Guo, Rui Hu, Jun Zhao, Yanqing Wu, Guoqiang Yang and Yi Li
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Abstract

A molecular glass functionalized with γ-hydroxy carboxylate and triphenylsulfonium groups (ADTPS) was successfully synthesized and characterized. The solubility, thermal stability, and film-forming ability of the molecular glass were evaluated, confirming the feasibility of using it as a resist material. The lithographic performances of the ADTPS resist were studied by electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL). It exhibited a high sensitivity for EBL with a dose-to-clear of only 145 μC cm−2. A line/space (L/S) down to a 22 nm resist pattern was achieved by EBL. The ADTPS resist was further evaluated by EUVL, achieving performance down to a 20 nm HP pattern at a dose of 13.3 mJ cm−2, which is more than 10 times higher than that of most triphenyl sulfonium-based non-chemically amplified resists (n-CARs). The increasing sensitivity is attributed to the occurrence of cascade esterification, which produces a subsequent lactone or ester and leads to an enormous change in solubility. The ADTPS molecular resist significantly improves the sensitivity, offering a promising pathway for the design and development of high-sensitivity molecular n-CARs.

Abstract Image

通过级联酯化提高非化学扩增分子抗蚀剂的敏感性
成功地合成了一种γ-羟基羧酸和三苯基磺酸基(ADTPS)功能化的分子玻璃并对其进行了表征。对分子玻璃的溶解度、热稳定性和成膜能力进行了评价,证实了其作为抗蚀剂材料的可行性。采用电子束光刻(EBL)和极紫外光刻(EUVL)技术研究了ADTPS抗蚀剂的光刻性能。它对EBL具有很高的灵敏度,剂量比清除仅为145 μC cm−2。利用EBL实现了22 nm的线/空间(L/S)电阻模式。通过EUVL对ADTPS抗蚀剂进行了进一步评估,在13.3 mJ cm−2的剂量下,ADTPS抗蚀剂的性能达到了20 nm的HP模式,这比大多数基于三苯磺酸的非化学扩增抗蚀剂(n-CARs)高出10倍以上。增加的敏感性归因于级联酯化反应的发生,它产生随后的内酯或酯,并导致溶解度的巨大变化。ADTPS分子抗蚀剂显著提高了灵敏度,为设计和开发高灵敏度的分子n-CARs提供了一条有希望的途径。
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