Competitive Growth of Sb2Se3 Micro‐Nanostructures Advancing Full‐Color Polarization Imaging in Scattering Environments

Abstract

Low‐dimensional semiconductors, which exhibit strong anisotropy of electrical conductance and optical response, provide a forward‐looking candidate to guide the future advancement of next‐generation polarization‐sensitive photodetection and imaging systems. However, the narrow operating bandwidths that result in serious loss of spectral information limit their employment in polychromatic settings. Herein, full‐color polarization imaging utilizing an anisotropic Sb2Se3 microwire photodetector is demonstrated. Leveraging a vapor‐solid phase deposition method with spatially confined regulation, this study competitively grows low‐dimensional Sb2Se3 single crystals featuring high‐stability, environmental friendliness, broadband response, noteworthy electrical, and optoelectrical anisotropies, which rejuvenate its potential in the realm of polarization‐sensitive photodetection. Designed for self‐biased operation, an Sb₂Se₃ microwire Schottky‐junction photodetector achieves broadband photodetection from ultraviolet to near‐infrared wavelengths, positioning it competitively among analogous devices. Remarkably, the detector demonstrates strong polarization‐sensitive detection across the full visible to near‐infrared spectrum (400–1000 nm), achieving an outstanding polarization anisotropy ratio exceeding 8.5. Leveraging its strong polarization sensitivity (>8.5 anisotropy ratio), the detector achieves high‐fidelity RGB polarized imaging, as demonstrated through successful reconstruction of targets in light‐scattering environments. By developing newly‐designed synthesis strategies for van der Waals layered materials, this study enables next‐generation full‐spectrum photodetectors with high polarization sensitivity, addressing critical needs in advanced optical systems.