Competitive Growth of Sb2Se3 Micro‐Nanostructures Advancing Full‐Color Polarization Imaging in Scattering Environments

IF 9.8 1区 物理与天体物理 Q1 OPTICS
Tao He, Peng Wan, Peng Guo, Huijie Feng, Yun Wei, Daning Shi, Caixia Kan, Mingming Jiang
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Abstract

Low‐dimensional semiconductors, which exhibit strong anisotropy of electrical conductance and optical response, provide a forward‐looking candidate to guide the future advancement of next‐generation polarization‐sensitive photodetection and imaging systems. However, the narrow operating bandwidths that result in serious loss of spectral information limit their employment in polychromatic settings. Herein, full‐color polarization imaging utilizing an anisotropic Sb2Se3 microwire photodetector is demonstrated. Leveraging a vapor‐solid phase deposition method with spatially confined regulation, this study competitively grows low‐dimensional Sb2Se3 single crystals featuring high‐stability, environmental friendliness, broadband response, noteworthy electrical, and optoelectrical anisotropies, which rejuvenate its potential in the realm of polarization‐sensitive photodetection. Designed for self‐biased operation, an Sb₂Se₃ microwire Schottky‐junction photodetector achieves broadband photodetection from ultraviolet to near‐infrared wavelengths, positioning it competitively among analogous devices. Remarkably, the detector demonstrates strong polarization‐sensitive detection across the full visible to near‐infrared spectrum (400–1000 nm), achieving an outstanding polarization anisotropy ratio exceeding 8.5. Leveraging its strong polarization sensitivity (>8.5 anisotropy ratio), the detector achieves high‐fidelity RGB polarized imaging, as demonstrated through successful reconstruction of targets in light‐scattering environments. By developing newly‐designed synthesis strategies for van der Waals layered materials, this study enables next‐generation full‐spectrum photodetectors with high polarization sensitivity, addressing critical needs in advanced optical systems.
Sb2Se3微纳米结构的竞争生长促进了散射环境下的全彩色偏振成像
低维半导体具有较强的电导率和光响应各向异性,为指导下一代偏振敏感光探测和成像系统的未来发展提供了前瞻性的候选材料。然而,窄的工作带宽导致严重的光谱信息损失,限制了它们在多色设置中的应用。本文演示了利用各向异性Sb2Se3微线光电探测器的全彩色偏振成像。利用空间受限的气固相沉积方法,本研究竞争性地生长出低维Sb2Se3单晶,具有高稳定性、环境友好性、宽带响应、显著的电学和光电学各向异性,这使其在偏振敏感光探测领域具有潜力。Sb₂Se₃微丝肖特基结光电探测器设计用于自偏置操作,实现了从紫外到近红外波长的宽带光电探测,使其在类似器件中具有竞争力。值得注意的是,该探测器在全可见光到近红外光谱(400-1000 nm)范围内具有很强的偏振敏感探测能力,偏振各向异性比超过8.5。利用其强大的偏振灵敏度(>;8.5各向异性比),探测器实现了高保真的RGB偏振成像,通过在光散射环境中成功重建目标证明了这一点。通过开发新设计的范德华层状材料合成策略,本研究使下一代具有高偏振灵敏度的全光谱光电探测器成为可能,解决了先进光学系统的关键需求。
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来源期刊
CiteScore
14.20
自引率
5.50%
发文量
314
审稿时长
2 months
期刊介绍: Laser & Photonics Reviews is a reputable journal that publishes high-quality Reviews, original Research Articles, and Perspectives in the field of photonics and optics. It covers both theoretical and experimental aspects, including recent groundbreaking research, specific advancements, and innovative applications. As evidence of its impact and recognition, Laser & Photonics Reviews boasts a remarkable 2022 Impact Factor of 11.0, according to the Journal Citation Reports from Clarivate Analytics (2023). Moreover, it holds impressive rankings in the InCites Journal Citation Reports: in 2021, it was ranked 6th out of 101 in the field of Optics, 15th out of 161 in Applied Physics, and 12th out of 69 in Condensed Matter Physics. The journal uses the ISSN numbers 1863-8880 for print and 1863-8899 for online publications.
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