Study of corrosion mechanism and material removal behavior of oxidizers and environment on electrochemically assisted friction wear of single-crystal GaN
Jisheng Pan , Yangting Ou , Juze Xie , Jiawen Yao , Jingkuang Wen , Qiusheng Yan
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引用次数: 0
Abstract
To systematically investigate the corrosion mechanism and material removal behavior of single-crystal GaN under electrochemically assisted conditions with various oxidants and environmental factors, an electrochemically assisted friction and wear experimental setup was developed in this study. The oxidation behaviors of single-crystal GaN with different oxidants (Na2S2O8 and H2O2) and its friction and wear characteristics under diverse environmental conditions were comprehensively analyzed. A comparative analysis was conducted on the corrosion effects and material removal mechanisms of single-crystal GaN under varying oxidation conditions. The results indicate that the corrosion capability of Na2S2O8 on single-crystal GaN is significantly stronger than that of H2O2. Under Fe-C+40 mA/cm2 conditions, the enhanced oxidation effect is most pronounced, leading to the maximum wear removal area of single-crystal GaN during the frictional wear process. Finally, the corrosion mechanism and material removal process of single-crystal GaN under sodium persulfate conditions were elucidated in detail.
期刊介绍:
Wear journal is dedicated to the advancement of basic and applied knowledge concerning the nature of wear of materials. Broadly, topics of interest range from development of fundamental understanding of the mechanisms of wear to innovative solutions to practical engineering problems. Authors of experimental studies are expected to comment on the repeatability of the data, and whenever possible, conduct multiple measurements under similar testing conditions. Further, Wear embraces the highest standards of professional ethics, and the detection of matching content, either in written or graphical form, from other publications by the current authors or by others, may result in rejection.