QUDEN: A Matlab Package for First-Principles Quantum-Transport Engineering of 2D Material-Based Nanodevices

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Mislav Matić, Mirko Poljak
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引用次数: 0

Abstract

The simulation of nanotransistors and the inclusion of all relevant physics is a challenging task, especially when working with one-dimensional (1D) nanomaterials in which quantum confinement strongly influences the material properties and device performance. Several groups have already developed state-of-the-art quantum transport simulators based on the first principles non-equilibrium Green's function (NEGF) formalism, and a few have been commercialized. However, these tools are computationally demanding as they require solving the NEGF and the 3D Poisson equation. Here we present an open-source quantum-transport solver for the first principles device engineering for nanoelectronics (QUDEN) implemented in Matlab. QUDEN uses NEGF and the ballistic top-of-the-barrier model to simulate ultrascaled field-effect transistors (FETs) with channels made of nanoribbons of 2D materials, while the device Hamiltonian is obtained using first principles density functional theory (DFT) in combination with maximally localized Wannier functions (MLWFs). This approach preserves the accuracy of the full NEGF-3D Poisson simulation in the on-state while using a simplified self-consistent electrostatics that leads to a much lower computational burden. Taking monolayer germanium-selenide (GeSe) nanoribbons as an example, we show that QUDEN can be used for fast screening and accurate evaluation of numerous 2D/1D materials for future FETs.

基于二维材料的纳米器件第一性原理量子传输工程的Matlab软件包
纳米晶体管的模拟和包含所有相关物理是一项具有挑战性的任务,特别是当处理一维(1D)纳米材料时,量子约束强烈影响材料特性和器件性能。几个小组已经基于第一原理非平衡格林函数(NEGF)形式主义开发了最先进的量子输运模拟器,其中一些已经商业化。然而,这些工具在计算上要求很高,因为它们需要求解NEGF和3D泊松方程。在这里,我们提出了一个开源的量子输运求解器,用于在Matlab中实现的纳米电子学第一原理器件工程(QUDEN)。QUDEN使用NEGF和弹道势垒顶模型来模拟具有二维材料纳米带通道的超尺度场效应晶体管(fet),而器件哈密顿量则使用第一性原理密度泛函理论(DFT)结合最大局部化万尼尔函数(mlwf)获得。这种方法保留了在导通状态下完整的NEGF-3D泊松模拟的准确性,同时使用了简化的自一致静电,从而大大降低了计算负担。以单层硒化锗(GeSe)纳米带为例,我们证明了QUDEN可以用于快速筛选和准确评估未来fet的许多2D/1D材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
4.60
自引率
6.20%
发文量
101
审稿时长
>12 weeks
期刊介绍: Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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