{"title":"QUDEN: A Matlab Package for First-Principles Quantum-Transport Engineering of 2D Material-Based Nanodevices","authors":"Mislav Matić, Mirko Poljak","doi":"10.1002/jnm.70079","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>The simulation of nanotransistors and the inclusion of all relevant physics is a challenging task, especially when working with one-dimensional (1D) nanomaterials in which quantum confinement strongly influences the material properties and device performance. Several groups have already developed state-of-the-art quantum transport simulators based on the first principles non-equilibrium Green's function (NEGF) formalism, and a few have been commercialized. However, these tools are computationally demanding as they require solving the NEGF and the 3D Poisson equation. Here we present an open-source quantum-transport solver for the first principles device engineering for nanoelectronics (QUDEN) implemented in <span>Matlab</span>. QUDEN uses NEGF and the ballistic top-of-the-barrier model to simulate ultrascaled field-effect transistors (FETs) with channels made of nanoribbons of 2D materials, while the device Hamiltonian is obtained using first principles density functional theory (DFT) in combination with maximally localized Wannier functions (MLWFs). This approach preserves the accuracy of the full NEGF-3D Poisson simulation in the on-state while using a simplified self-consistent electrostatics that leads to a much lower computational burden. Taking monolayer germanium-selenide (GeSe) nanoribbons as an example, we show that QUDEN can be used for fast screening and accurate evaluation of numerous 2D/1D materials for future FETs.</p>\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 4","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2025-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70079","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The simulation of nanotransistors and the inclusion of all relevant physics is a challenging task, especially when working with one-dimensional (1D) nanomaterials in which quantum confinement strongly influences the material properties and device performance. Several groups have already developed state-of-the-art quantum transport simulators based on the first principles non-equilibrium Green's function (NEGF) formalism, and a few have been commercialized. However, these tools are computationally demanding as they require solving the NEGF and the 3D Poisson equation. Here we present an open-source quantum-transport solver for the first principles device engineering for nanoelectronics (QUDEN) implemented in Matlab. QUDEN uses NEGF and the ballistic top-of-the-barrier model to simulate ultrascaled field-effect transistors (FETs) with channels made of nanoribbons of 2D materials, while the device Hamiltonian is obtained using first principles density functional theory (DFT) in combination with maximally localized Wannier functions (MLWFs). This approach preserves the accuracy of the full NEGF-3D Poisson simulation in the on-state while using a simplified self-consistent electrostatics that leads to a much lower computational burden. Taking monolayer germanium-selenide (GeSe) nanoribbons as an example, we show that QUDEN can be used for fast screening and accurate evaluation of numerous 2D/1D materials for future FETs.
期刊介绍:
Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models.
The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics.
Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.