{"title":"DC-to-150 GHz Bandwidth InP HBT Mixer Module With Upper-Sideband Gain-Enhancing Function","authors":"Teruo Jyo;Munehiko Nagatani;Hitoshi Wakita;Miwa Mutoh;Yuta Shiratori;Hiroyuki Takahashi","doi":"10.1109/TMTT.2024.3509695","DOIUrl":null,"url":null,"abstract":"This article presents a wideband (WB) mixer module for next-generation optical communications. The mixer module includes 0.8- and 1-mm coaxial connector interfaces and implements an active mixer IC fabricated using indium phosphide (InP) double hetero-junction bipolar transistor (DHBT) technology. For the mixer IC, we devised an upper-sideband (USB) gain-enhancing technique using a common-mode-gain boosted differential pair and differential local oscillator (LO) signals with a phase offset. The fabricated mixer module achieved a conversion gain (CG) of −4 dB and an RF bandwidth of 150 GHz, from direct current (dc) to 150 GHz, which is the widest bandwidth ever reported.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 7","pages":"3827-3835"},"PeriodicalIF":4.5000,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10778443","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Microwave Theory and Techniques","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10778443/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This article presents a wideband (WB) mixer module for next-generation optical communications. The mixer module includes 0.8- and 1-mm coaxial connector interfaces and implements an active mixer IC fabricated using indium phosphide (InP) double hetero-junction bipolar transistor (DHBT) technology. For the mixer IC, we devised an upper-sideband (USB) gain-enhancing technique using a common-mode-gain boosted differential pair and differential local oscillator (LO) signals with a phase offset. The fabricated mixer module achieved a conversion gain (CG) of −4 dB and an RF bandwidth of 150 GHz, from direct current (dc) to 150 GHz, which is the widest bandwidth ever reported.
期刊介绍:
The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.