A simulation study of SiC trench JFET with embedded diode for performance improvement

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-07-02 DOI:10.1016/j.mejo.2025.106793

Shida Zhang , Xintian Zhou , Yun Tang , Yunpeng Jia , Dongqing Hu , Yu Wu , Yuanfu Zhao

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引用次数: 0

Abstract

This paper proposes and studies two novel structures of SiC trench JFET (TJFET) using TCAD simulation tool. One is integrated with PN junction diode (PN-TJFET), and the other is integrated with Schottky barrier diode (SBD-TJFET). For conventional TJFET (C-TJFET), the addition of PN junction and Schottky barrier diodes are used to improve the performance of the device in the 3rd quadrant. It is shown that the reverse turn-on voltage could be reduced from −8.5 V to −2.1 V in the PN-TJFET, while to −0.9 V in the SBD-TJFET, thus significantly lowering the power loss when working for freewheeling. Moreover, both the PN-TJFET and SBD-TJFET demonstrate excellent characteristics in the 1st quadrant. The Miller capacitance C_GD and gate-to-drain charge Q_GD are nearly halved as compared to the C-TJFET, leading to a reduction in switching loss of nearly 56 %. These results, combined with their good process feasibility, indicate that the proposed structures have great potential for applications in the high-frequency domain.

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为提高碳化硅沟槽场效应管的性能，对其进行了仿真研究

本文利用TCAD仿真工具提出并研究了两种新型碳化硅沟槽场效应管（TJFET）结构。一个集成PN结二极管（PN- tjfet），另一个集成肖特基势垒二极管（SBD-TJFET）。对于传统的TJFET (C-TJFET)，通过增加PN结和肖特基势垒二极管来提高器件在第三象限的性能。结果表明，PN-TJFET的反向导通电压可从−8.5 V降至−2.1 V，而SBD-TJFET的反向导通电压可降至−0.9 V，从而显著降低了自由旋转工作时的功率损耗。此外，PN-TJFET和SBD-TJFET在第一象限都表现出优异的特性。与C-TJFET相比，米勒电容CGD和栅漏电荷QGD几乎减少了一半，导致开关损耗减少了近56%。这些结果，结合其良好的工艺可行性，表明所提出的结构在高频领域具有很大的应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.