Mixed-Signal Silicon Photomultiplier With Reconfigurable Pulse Shaper for Background Light Rejection

IF 5.2 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-03-20 DOI:10.1109/TCSI.2025.3549682

Arianna Morciano;Massimo Gandola;Matteo Perenzoni;Leonardo Gasparini;Antonio Vincenzo Radogna;Stefano D'Amico

{"title":"Mixed-Signal Silicon Photomultiplier With Reconfigurable Pulse Shaper for Background Light Rejection","authors":"Arianna Morciano;Massimo Gandola;Matteo Perenzoni;Leonardo Gasparini;Antonio Vincenzo Radogna;Stefano D'Amico","doi":"10.1109/TCSI.2025.3549682","DOIUrl":null,"url":null,"abstract":"This paper presents a mixed-signal Silicon Photomultiplier with integrated front-end, including a reconfigurable Pulse Shaper. Each Silicon Photon Avalanche Diode of the msSiPM converts a photon into a programmable current pulse. Then, all analog current signals are collected by a transimpedance amplifier which provides an output voltage proportional to the number of triggered SPADs. By properly tuning the shape of the current pulses, the proposed msSiPM rejects the background light and optimizes the Signal-to-Noise Ratio. As the architecture is mostly digital, msSiPM consumes a low static power consumption, equal to 428 <inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>W. The receiver is composed by a <inline-formula> <tex-math>$20 \\,\\, \\times 20$ </tex-math></inline-formula>-pixel array, and it is fabricated in a 0.11 <inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m CMOS technology reaching a pixel fill factor equal to 32.8%. Measurements have been carried out under different background photon fluxes, one stronger and one weaker, corresponding to 4.15 and 2.15 GPhotons/s at the SiPM, demonstrating strong background rejection in both conditions. In addition, a SNR maximization has been verified. Analytical models for SNR and Signal-to-Background Ratio have been presented, showing a good matching with experimental results.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 7","pages":"3126-3137"},"PeriodicalIF":5.2000,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems I: Regular Papers","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10935340/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

This paper presents a mixed-signal Silicon Photomultiplier with integrated front-end, including a reconfigurable Pulse Shaper. Each Silicon Photon Avalanche Diode of the msSiPM converts a photon into a programmable current pulse. Then, all analog current signals are collected by a transimpedance amplifier which provides an output voltage proportional to the number of triggered SPADs. By properly tuning the shape of the current pulses, the proposed msSiPM rejects the background light and optimizes the Signal-to-Noise Ratio. As the architecture is mostly digital, msSiPM consumes a low static power consumption, equal to 428

$\mu $

W. The receiver is composed by a

$20 \,\, \times 20$

-pixel array, and it is fabricated in a 0.11

$\mu $

m CMOS technology reaching a pixel fill factor equal to 32.8%. Measurements have been carried out under different background photon fluxes, one stronger and one weaker, corresponding to 4.15 and 2.15 GPhotons/s at the SiPM, demonstrating strong background rejection in both conditions. In addition, a SNR maximization has been verified. Analytical models for SNR and Signal-to-Background Ratio have been presented, showing a good matching with experimental results.

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具有可重构脉冲整形器的混合信号硅光电倍增管，用于背景光抑制

本文提出了一种集成前端的混合信号硅光电倍增管，包括一个可重构脉冲整形器。msSiPM的每个硅光子雪崩二极管将光子转换成可编程电流脉冲。然后，所有模拟电流信号由一个跨阻放大器收集，该放大器提供与触发spad数量成比例的输出电压。通过适当调整电流脉冲的形状，所提出的msSiPM可以抑制背景光并优化信噪比。由于结构主要是数字化的，因此msSiPM的静态功耗较低，为428 $\mu $ w，接收器由$20,$,$ × 20$像素阵列组成，采用0.11 $\mu $ m CMOS技术制造，像素填充系数为32.8%。在不同的背景光子通量下进行了测量，一个更强一个更弱，对应于SiPM的4.15和2.15 g光子/s，在这两种条件下都显示出很强的背景抑制。此外，还验证了信噪比最大化。提出了信噪比和信背景比的分析模型，与实验结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Circuits and Systems I: Regular Papers 工程技术-工程：电子与电气

CiteScore

9.80

自引率

11.80%

发文量

441

审稿时长

2 months

期刊介绍： TCAS I publishes regular papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: - Circuits: Analog, Digital and Mixed Signal Circuits and Systems - Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic - Circuits and Systems, Power Electronics and Systems - Software for Analog-and-Logic Circuits and Systems - Control aspects of Circuits and Systems.