Surface reconstruction of Co3O4 induced by V, S co-doping for boosting hydrogen evolution reaction

IF 2.7 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Letters Pub Date : 2025-06-30 DOI:10.1016/j.matlet.2025.139004

Lin Xu , Yixue Xu , Chenyang Hao , Yuqiao Wang

引用次数: 0

Abstract

The strategy of dual doping with V and S was adopted to optimise the electronic environment of Co₃O₄ and induce surface reconstruction. V doping facilitated charge transfer during the reconstruction process by utilising vacant electron orbitals. S doping promoted the generation of Co³⁺ active sites, creating the necessary condition for surface reconstruction. After reconstruction, CoOOH active phase was generated on the surface of V, S dual doped Co₃O₄ (V, S-Co₃O₄), and the obtained CoOOH/V, S-Co₃O₄ exhibited a low overpotential of 35 mV for hydrogen evolution reaction (HER).

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V、S共掺杂促进析氢反应诱导Co3O4表面重构

采用V、S双掺杂策略优化Co3O4的电子环境，诱导表面重构。V掺杂利用空电子轨道促进了重构过程中的电荷转移。S掺杂促进了Co3+活性位点的生成，为表面重构创造了必要条件。重构后，在V、S双掺杂的Co3O4 （V, S-Co3O4）表面生成CoOOH活性相，所得CoOOH/V， S-Co3O4的析氢反应过电位低至35 mV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Letters 工程技术-材料科学：综合

CiteScore

5.60

自引率

3.30%

发文量

1948

审稿时长

50 days

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