Nicolaus Kratochwil , Emilie Roncali , Joshua W. Cates , Gerard Ariño-Estrada
{"title":"Optical crosstalk between SiPMs in dual-ended readout","authors":"Nicolaus Kratochwil , Emilie Roncali , Joshua W. Cates , Gerard Ariño-Estrada","doi":"10.1016/j.sna.2025.116782","DOIUrl":null,"url":null,"abstract":"<div><div>Gamma-ray detection performance in scintillation crystals can be improved by coupling multiple photodetectors around the sensitive volume. Greater light collection leads to improved time and energy resolution. However, neighboring detector noise, both uncorrelated and correlated, can produce optical photons that may deteriorate their performance. We studied the impact of external optical crosstalk in a dual-ended readout setup using AFBR-S4N44P014M silicon photomultipliers (SiPMs) from Broadcom coupled to 20 mm thick bismuth germanate (BGO) crystal, with and without scintillation light. SiPMs were biased individually. The behavior of crosstalk was analytically modeled. The dark count rate increased up to 50% when both SiPMs were biased with respect to only one active SiPM. At the same time, the crosstalk probability increased more than 2-fold at high overvoltages due to detection and re-emission of avalanche photons, limiting the operational range and causing an up to 5-fold increase in the total number of detected photons. Energy resolution in BGO was impacted, and the coincidence time resolution distribution shape between two BGO detectors was significantly altered-both in a non-intuitively manner. Experimental results validate the analytical model which rely on a single constant to predict dark count rate, crosstalk and light output enhancement. Crosstalk in multi-SiPM configurations, especially at high overvoltage, significantly impacts performance. Deep understanding of the effects of excess noise in SiPM is crucial for an optimal overall gamma detector operation. Findings extend to applications in high-energy physics, time-of-flight positron emission tomography using dual-ended or monolithic crystals, and cryogenic SiPM experiments in neutrino/dark matter studies.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"393 ","pages":"Article 116782"},"PeriodicalIF":4.1000,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424725005886","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Gamma-ray detection performance in scintillation crystals can be improved by coupling multiple photodetectors around the sensitive volume. Greater light collection leads to improved time and energy resolution. However, neighboring detector noise, both uncorrelated and correlated, can produce optical photons that may deteriorate their performance. We studied the impact of external optical crosstalk in a dual-ended readout setup using AFBR-S4N44P014M silicon photomultipliers (SiPMs) from Broadcom coupled to 20 mm thick bismuth germanate (BGO) crystal, with and without scintillation light. SiPMs were biased individually. The behavior of crosstalk was analytically modeled. The dark count rate increased up to 50% when both SiPMs were biased with respect to only one active SiPM. At the same time, the crosstalk probability increased more than 2-fold at high overvoltages due to detection and re-emission of avalanche photons, limiting the operational range and causing an up to 5-fold increase in the total number of detected photons. Energy resolution in BGO was impacted, and the coincidence time resolution distribution shape between two BGO detectors was significantly altered-both in a non-intuitively manner. Experimental results validate the analytical model which rely on a single constant to predict dark count rate, crosstalk and light output enhancement. Crosstalk in multi-SiPM configurations, especially at high overvoltage, significantly impacts performance. Deep understanding of the effects of excess noise in SiPM is crucial for an optimal overall gamma detector operation. Findings extend to applications in high-energy physics, time-of-flight positron emission tomography using dual-ended or monolithic crystals, and cryogenic SiPM experiments in neutrino/dark matter studies.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...