Nickel Pyrrolide Complexes as Precursors for the Chemical Vapor Deposition of Metallic Thin Films of Nickel.

IF 4.7 2区 化学 Q1 CHEMISTRY, INORGANIC & NUCLEAR
Thomas Pugh,Joe C Goodall,Kieran C Molloy,Andrew L Johnson
{"title":"Nickel Pyrrolide Complexes as Precursors for the Chemical Vapor Deposition of Metallic Thin Films of Nickel.","authors":"Thomas Pugh,Joe C Goodall,Kieran C Molloy,Andrew L Johnson","doi":"10.1021/acs.inorgchem.5c01934","DOIUrl":null,"url":null,"abstract":"We report here the synthesis of a novel class of precursors for the chemical vapor deposition (CVD) of thin films of metallic, face-centered cubic (fcc) nickel. The complexes are simple and inexpensive to synthesize, possess high volatility (vapor pressure = 0.1 Torr at 40 °C), and enable rapid deposition rates of nickel under CVD conditions (up to 6.5 nm/min at 250 °C). We show that the deposited nickel films have high elemental purity (>99 at%), resistivity comparable to bulk nickel (7-23 μΩ·cm cf. 6.93 μΩ·cm), exhibit shallow surface features (ca. ± 10 nm), and very low surface roughness (RMS = 2.72 nm). These data compare favorably with those of the current state-of-the-art metallic nickel CVD precursors.","PeriodicalId":40,"journal":{"name":"Inorganic Chemistry","volume":"69 1","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Chemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1021/acs.inorgchem.5c01934","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0

Abstract

We report here the synthesis of a novel class of precursors for the chemical vapor deposition (CVD) of thin films of metallic, face-centered cubic (fcc) nickel. The complexes are simple and inexpensive to synthesize, possess high volatility (vapor pressure = 0.1 Torr at 40 °C), and enable rapid deposition rates of nickel under CVD conditions (up to 6.5 nm/min at 250 °C). We show that the deposited nickel films have high elemental purity (>99 at%), resistivity comparable to bulk nickel (7-23 μΩ·cm cf. 6.93 μΩ·cm), exhibit shallow surface features (ca. ± 10 nm), and very low surface roughness (RMS = 2.72 nm). These data compare favorably with those of the current state-of-the-art metallic nickel CVD precursors.
镍吡啶配合物作为化学气相沉积镍金属薄膜的前驱体。
我们在这里报道了一类用于化学气相沉积(CVD)金属面心立方(fcc)镍薄膜的新型前驱体的合成。该配合物合成简单,成本低廉,具有高挥发性(40°C时蒸汽压= 0.1 Torr),并且能够在CVD条件下快速沉积镍(250°C时高达6.5 nm/min)。我们发现,沉积的镍膜具有高元素纯度(bbb99 at%),电阻率与大块镍相当(7-23 μΩ·cm cf. 6.93 μΩ·cm),表面特征较浅(约±10 nm),表面粗糙度非常低(RMS = 2.72 nm)。这些数据与目前最先进的金属镍CVD前体相比较有利。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Inorganic Chemistry
Inorganic Chemistry 化学-无机化学与核化学
CiteScore
7.60
自引率
13.00%
发文量
1960
审稿时长
1.9 months
期刊介绍: Inorganic Chemistry publishes fundamental studies in all phases of inorganic chemistry. Coverage includes experimental and theoretical reports on quantitative studies of structure and thermodynamics, kinetics, mechanisms of inorganic reactions, bioinorganic chemistry, and relevant aspects of organometallic chemistry, solid-state phenomena, and chemical bonding theory. Emphasis is placed on the synthesis, structure, thermodynamics, reactivity, spectroscopy, and bonding properties of significant new and known compounds.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信