Thomas Pugh,Joe C Goodall,Kieran C Molloy,Andrew L Johnson
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引用次数: 0
Abstract
We report here the synthesis of a novel class of precursors for the chemical vapor deposition (CVD) of thin films of metallic, face-centered cubic (fcc) nickel. The complexes are simple and inexpensive to synthesize, possess high volatility (vapor pressure = 0.1 Torr at 40 °C), and enable rapid deposition rates of nickel under CVD conditions (up to 6.5 nm/min at 250 °C). We show that the deposited nickel films have high elemental purity (>99 at%), resistivity comparable to bulk nickel (7-23 μΩ·cm cf. 6.93 μΩ·cm), exhibit shallow surface features (ca. ± 10 nm), and very low surface roughness (RMS = 2.72 nm). These data compare favorably with those of the current state-of-the-art metallic nickel CVD precursors.
期刊介绍:
Inorganic Chemistry publishes fundamental studies in all phases of inorganic chemistry. Coverage includes experimental and theoretical reports on quantitative studies of structure and thermodynamics, kinetics, mechanisms of inorganic reactions, bioinorganic chemistry, and relevant aspects of organometallic chemistry, solid-state phenomena, and chemical bonding theory. Emphasis is placed on the synthesis, structure, thermodynamics, reactivity, spectroscopy, and bonding properties of significant new and known compounds.