{"title":"A 28-nm Cascode Current Mirror-Based Inconsistency-Free Charging-and-Discharging SRAM-CIM Macro for High-Efficient Convolutional Neural Networks","authors":"Chunyu Peng;Jiating Guo;Shengyuan Yan;Yiming Wei;Xiaohang Chen;Wenjuan Lu;Chenghu Dai;Zhiting Lin;Xiulong Wu","doi":"10.1109/TVLSI.2025.3552641","DOIUrl":null,"url":null,"abstract":"Computing-in-memory (CIM) is an emerging approach to alleviate the von Neumann bottleneck and enhance energy efficiency and throughput. This brief introduces a 16-Kb static random access memory (SRAM) CIM macro for convolutional neural networks (CNNs), featuring a cascode current mirror-based inconsistency-free computing circuits (CICCs). The bias voltage of CICC is provided by a cascode current mirror (CCM) circuit. The proposed architecture improves the consistency and linearity of bitline (BL) charge and discharge rates in the analog current domain, enhancing computational accuracy. Additionally, the charge and discharge on the BLs represent the positive or negative calculation result, eliminating the need for extra encoding and logic circuits to handle sign bits. The SRAM-CIM macro achieves an energy efficiency of 59.1–134.0 TOPS/W and a throughput of 0.41 TOPS in a 28-nm CMOS technology, and the estimated inference accuracy on MNIST and CIFAR-10 datasets is 96.5% and 91.4%, respectively, with 5-bit input precision and 1-bit weight precision.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"33 7","pages":"2044-2048"},"PeriodicalIF":3.1000,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10950131/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
Computing-in-memory (CIM) is an emerging approach to alleviate the von Neumann bottleneck and enhance energy efficiency and throughput. This brief introduces a 16-Kb static random access memory (SRAM) CIM macro for convolutional neural networks (CNNs), featuring a cascode current mirror-based inconsistency-free computing circuits (CICCs). The bias voltage of CICC is provided by a cascode current mirror (CCM) circuit. The proposed architecture improves the consistency and linearity of bitline (BL) charge and discharge rates in the analog current domain, enhancing computational accuracy. Additionally, the charge and discharge on the BLs represent the positive or negative calculation result, eliminating the need for extra encoding and logic circuits to handle sign bits. The SRAM-CIM macro achieves an energy efficiency of 59.1–134.0 TOPS/W and a throughput of 0.41 TOPS in a 28-nm CMOS technology, and the estimated inference accuracy on MNIST and CIFAR-10 datasets is 96.5% and 91.4%, respectively, with 5-bit input precision and 1-bit weight precision.
期刊介绍:
The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society.
Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels.
To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.