{"title":"Crystalline evolution of c-axis aligned IGZO thin films: From deposition to post-annealing","authors":"Yi-Nung Chao , Yuan-Chieh Lu , Gui-Sheng Zeng , Sheng-Hui Chen","doi":"10.1016/j.optmat.2025.117287","DOIUrl":null,"url":null,"abstract":"<div><div>High-Power Impulse Magnetron Sputtering (HiPIMS) has been employed to prepare c-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) thin films with negative substrate biasing. The chemical composition and crystal structure of the thin film are analyzed using X-ray Diffractometer (XRD) and Transmission Electron Microscope. Atomic Force Microscope is utilized to assess the surface roughness of the CAAC-IGZO thin films. In this study, annealing amorphous IGZO thin films at 1075 °C resulted in the formation of CAAC-IGZO with a smaller full-width at half-maximum in the XRD spectrum. The annealing process leads to the stratification of zinc oxide-based compounds, creating a three-layer structure: the top layer consists of zinc oxide, the middle layer is CAAC-IGZO, and the layer closest to the substrate is also zinc oxide. This phenomenon is explained theoretically by referring metal-induced crystallization and analyzing the changes in Gibbs free energy.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"167 ","pages":"Article 117287"},"PeriodicalIF":4.2000,"publicationDate":"2025-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925346725006470","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
High-Power Impulse Magnetron Sputtering (HiPIMS) has been employed to prepare c-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) thin films with negative substrate biasing. The chemical composition and crystal structure of the thin film are analyzed using X-ray Diffractometer (XRD) and Transmission Electron Microscope. Atomic Force Microscope is utilized to assess the surface roughness of the CAAC-IGZO thin films. In this study, annealing amorphous IGZO thin films at 1075 °C resulted in the formation of CAAC-IGZO with a smaller full-width at half-maximum in the XRD spectrum. The annealing process leads to the stratification of zinc oxide-based compounds, creating a three-layer structure: the top layer consists of zinc oxide, the middle layer is CAAC-IGZO, and the layer closest to the substrate is also zinc oxide. This phenomenon is explained theoretically by referring metal-induced crystallization and analyzing the changes in Gibbs free energy.
期刊介绍:
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.