Electrical characteristic depending on the doping concentration of the AlGaSb barrier in the GaSb based dual-band nBn detector

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics Pub Date : 2025-06-24 DOI:10.1016/j.cap.2025.06.011

Jong Hun Lee , Geun Hyeong Kim , Tae In Kang , Min Soo Kwak , Jong Su Kim , Sang Jun Lee , Dong Wan Kim

{"title":"Electrical characteristic depending on the doping concentration of the AlGaSb barrier in the GaSb based dual-band nBn detector","authors":"Jong Hun Lee , Geun Hyeong Kim , Tae In Kang , Min Soo Kwak , Jong Su Kim , Sang Jun Lee , Dong Wan Kim","doi":"10.1016/j.cap.2025.06.011","DOIUrl":null,"url":null,"abstract":"<div><div>This paper investigates the effect of n-type doping in the Al0.35Ga0.65Sb barrier with undoped, Te:2x1015 cm−3, and Te:2x1016 cm−3 doping in the near-infrared (NIR)/short-wavelength infrared (SWIR) nBn detector through temperature-dependent dark current density and photocurrent density measurement. The dark current density at 80 K, 0.1 V were 0.003 A/cm2 (undoped), 0.005 A/cm2 (2x1015 cm−3), 0.053 A/cm2 (2x1016 cm−3). Given the negligible diffusion current and generation-recombination (G-R) current at low temperature, the increase is attributed to increased trap-assisted tunneling (TAT). In addition, the turn-on voltage of photocurrent at 300 K were 50 mV (undoped), 55 mV (2x1015 cm−3), and 70 mV (2x1016 cm−3), showing no significant increase with doping. This study indicates the importance of appropriate barrier doping concentration in designing of GaSb-based nBn detector for low-noise performance.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"78 ","pages":"Pages 24-28"},"PeriodicalIF":3.1000,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1567173925001373","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

This paper investigates the effect of n-type doping in the Al_0.35Ga_0.65Sb barrier with undoped, Te:2x10¹⁵ cm⁻³, and Te:2x10¹⁶ cm⁻³ doping in the near-infrared (NIR)/short-wavelength infrared (SWIR) nBn detector through temperature-dependent dark current density and photocurrent density measurement. The dark current density at 80 K, 0.1 V were 0.003 A/cm² (undoped), 0.005 A/cm² (2x10¹⁵ cm⁻³), 0.053 A/cm² (2x10¹⁶ cm⁻³). Given the negligible diffusion current and generation-recombination (G-R) current at low temperature, the increase is attributed to increased trap-assisted tunneling (TAT). In addition, the turn-on voltage of photocurrent at 300 K were 50 mV (undoped), 55 mV (2x10¹⁵ cm⁻³), and 70 mV (2x10¹⁶ cm⁻³), showing no significant increase with doping. This study indicates the importance of appropriate barrier doping concentration in designing of GaSb-based nBn detector for low-noise performance.

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基于GaSb的双波段nBn探测器中AlGaSb势垒掺杂浓度的电特性

在近红外(NIR)/短波红外（SWIR） nBn探测器中，通过测量温度相关的暗电流密度和光电流密度，研究了未掺杂Te:2 × 1015 cm−3和Te:2 × 1016 cm−3的n型掺杂对Al0.35Ga0.65Sb势垒的影响。在80k、0.1 V下，暗电流密度分别为0.003 A/cm2（未掺杂）、0.005 A/cm2 （2 × 1015 cm−3）、0.053 A/cm2 （2 × 1016 cm−3）。考虑到低温下可以忽略的扩散电流和生成-复合（G-R）电流，增加的原因是陷阱辅助隧道（TAT）的增加。此外，300 K时光电流的导通电压分别为50 mV（未掺杂）、55 mV （2 × 1015 cm−3）和70 mV (2 × 1016 cm−3)，掺杂后光电流的导通电压没有显著升高。该研究表明，适当的势垒掺杂浓度对于设计具有低噪声性能的gab基nBn探测器具有重要意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Current Applied Physics 物理-材料科学：综合

CiteScore

4.80

自引率

0.00%

发文量

213

审稿时长

33 days

期刊介绍： Current Applied Physics (Curr. Appl. Phys.) is a monthly published international journal covering all the fields of applied science investigating the physics of the advanced materials for future applications. Other areas covered: Experimental and theoretical aspects of advanced materials and devices dealing with synthesis or structural chemistry, physical and electronic properties, photonics, engineering applications, and uniquely pertinent measurement or analytical techniques. Current Applied Physics, published since 2001, covers physics, chemistry and materials science, including bio-materials, with their engineering aspects. It is a truly interdisciplinary journal opening a forum for scientists of all related fields, a unique point of the journal discriminating it from other worldwide and/or Pacific Rim applied physics journals. Regular research papers, letters and review articles with contents meeting the scope of the journal will be considered for publication after peer review. The Journal is owned by the Korean Physical Society.