Engineered metamorphosis: Neodymium-driven phase transformation in zirconia nanoarchitectures for next-generation radiation shields

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mohammad W. Marashdeh , K.A Mahmoud , Hanan Akhdar , Islam G. Alhindawy
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Abstract

Tetragonal zirconia (ZrO2) is a promising material for radiation shielding due to its high density, chemical stability, and non-toxic nature. In this study, tetragonal ZrO2 nanoparticles doped with neodymium (Nd3+) were synthesized using a modified hydrothermal method to enhance phase stability and radiation attenuation efficiency. Structural and morphological analyses confirmed successful stabilization of the tetragonal phase, with reduced particle size and improved homogeneity at higher Nd concentrations. Gamma-ray shielding performance was evaluated across energies from 0.059 to 2.506 MeV. The highest linear attenuation coefficient (LAC) obtained was 1.129 cm−1 at 0.059 MeV for the 3 mol% Nd-doped sample. Monte Carlo simulations and experimental results showed strong agreement. These findings demonstrate that Nd-doped tetragonal ZrO2 is a viable, environmentally friendly alternative to lead-based materials for low- to intermediate-energy gamma shielding, offering potential for safe and effective use in medical, industrial, and nuclear applications.

Abstract Image

工程变形:用于下一代辐射屏蔽的氧化锆纳米结构中钕驱动的相变
四边形氧化锆(ZrO2)具有高密度、化学稳定性好、无毒等优点,是一种很有前途的辐射屏蔽材料。在本研究中,采用改进的水热法合成了掺钕(Nd3+)的方形ZrO2纳米颗粒,以提高相稳定性和辐射衰减效率。结构和形态分析证实了四方相的成功稳定,在较高的Nd浓度下,颗粒尺寸减小,均匀性改善。在0.059至2.506 MeV的能量范围内对伽马射线屏蔽性能进行了评估。在0.059 MeV下,掺3mol % nd的样品得到了最高的线性衰减系数(LAC)为1.129 cm−1。蒙特卡罗模拟与实验结果吻合较好。这些发现表明,nd掺杂的四方ZrO2是一种可行的、环保的铅基材料替代品,可用于低至中能量的伽马屏蔽,在医疗、工业和核应用中具有安全有效的应用潜力。
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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