A 209 ps Shutter-Time CMOS Image Sensor for Ultra-Fast Diagnosis.

Abstract

A conventional microchannel plate framing camera is typically utilized for inertial confinement fusion diagnosis. However, as a vacuum electronic device, it has inherent limitations, such as a complex structure and the inability to achieve single-line-of-sight imaging. To address these challenges, a CMOS image sensor that can be seamlessly integrated with an electronic pulse broadening system can provide a viable alternative to the microchannel plate detector. This paper introduces the design of an 8 × 8 pixel-array ultrashort shutter-time single-framing CMOS image sensor, which leverages silicon epitaxial processing and a 0.18 μm standard CMOS process. The focus of this study is on the photodiode and the readout pixel-array circuit. The photodiode, designed using the silicon epitaxial process, achieves a quantum efficiency exceeding 30% in the visible light band at a bias voltage of 1.8 V, with a temporal resolution greater than 200 ps for visible light. The readout pixel-array circuit, which is based on the 0.18 μm standard CMOS process, incorporates 5T structure pixel units, voltage-controlled delayers, clock trees, and row-column decoding and scanning circuits. Simulations of the pixel circuit demonstrate an optimal temporal resolution of 60 ps. Under the shutter condition with the best temporal resolution, the maximum output swing of the pixel circuit is 448 mV, and the output noise is 77.47 μV, resulting in a dynamic range of 75.2 dB for the pixel circuit; the small-signal responsivity is 1.93 × 10^-7 V/e^-, and the full-well capacity is 2.3 Me^-. The maximum power consumption of the 8 × 8 pixel-array and its control circuits is 0.35 mW. Considering both the photodiode and the pixel circuit, the proposed CMOS image sensor achieves a temporal resolution better than 209 ps.