Influence of gamma radiation on the structural, optical, and electrical properties of indium tin oxide films with varying thicknesses

Abstract

This work explores how gamma radiation affects the optical and electrical behavior of indium tin oxide (ITO) thin films with two different thicknesses, 100 nm and 200 nm. The films were fabricated using DC magnetron sputtering under a constant power of 20 W and then irradiated with gamma rays at doses from 0 to 150 kGy. Structural characteristics were examined by X-ray diffraction (XRD), while surface morphology was studied using field emission scanning electron microscopy (FE-SEM). Optical measurements were performed using a UV-Vis spectrophotometer, and electrical properties were investigated by four-point probe and Hall effect methods. The experimental results indicate that the 200 nm films showed enhanced XRD peak intensity after gamma irradiation, whereas the 100 nm films exhibited a reduction in peak intensity. Both the optical transmittance and energy bandgap decreased as the radiation dose increased. In terms of resistivity, the 100 nm films showed a slight increase at 50 kGy before decreasing at higher doses, while the 200 nm samples presented a consistent increase throughout the dose range. Overall, the findings reflect how film thickness and radiation exposure together influence the physical and electronic characteristics of ITO layers.