Suppression of channel migration in 2D multilayer ReS2 via hBN passivation

IF 4.3 3区材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY

Journal of Physics and Chemistry of Solids Pub Date : 2025-06-26 DOI:10.1016/j.jpcs.2025.112983

Hyeong Jin Choi, Gyu-Tae Kim

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引用次数: 0

Abstract

Multilayer rhenium disulfide (ReS₂) has garnered attention due to the decoupled van der Waals interactions between its adjacent layers, resulting in significantly higher interlayer resistivity compared to other layered materials. However, for field-effect transistors (FETs) using two-dimensional (2D) materials, air exposure can degrade the sensitivity. Additionally, due to the decoupling layer, conduction layer migration under drain voltage (V_DS) changes affects electrical properties. This paper investigates the electrical characteristics of multilayer ReS₂ FETs after surface hexagonal boron nitride (hBN) passivation. Electrical characteristics for channel lengths of 0.30 μm, 1.3 μm, and 3.5 μm were compared to analyze the effects of surface hBN passivation. Passivation was implemented using a standard transfer technique. After hBN passivation, threshold voltage (V_th) increased and subthreshold swing improved. Additionally, it was observed that when the channel length is short, the variation in electrical properties in response to changes in V_DS decreases. In the low-frequency noise analysis, a 1/f² spectrum was observed at 0.30 μm and 1.3 μm before hBN passivation, but this spectrum disappeared after passivation. This indicates that the migration of the conduction layer, which occurs due to V_DS in short channels, is suppressed after hBN passivation. This study holds significance in understanding the change of electrical characteristics and the movement of conduction channel in 2D materials based on surface properties.

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通过hBN钝化抑制二维多层ReS2中的通道迁移

多层二硫化铼（ReS2）由于其相邻层之间的解耦范德华相互作用而引起了人们的关注，与其他层状材料相比，其层间电阻率显着提高。然而，对于使用二维（2D）材料的场效应晶体管（fet），暴露在空气中会降低灵敏度。此外，由于去耦层的存在，导层在漏极电压（VDS）变化下的迁移会影响电学性能。研究了表面六方氮化硼钝化后多层ReS2 fet的电学特性。对比了通道长度为0.30 μm、1.3 μm和3.5 μm时的电特性，分析了表面hBN钝化的影响。钝化是使用标准转移技术实现的。hBN钝化后，阈值电压（Vth）升高，亚阈值摆幅改善。此外，当通道长度较短时，响应VDS变化的电性能变化减小。低频噪声分析中，hBN钝化前在0.30 μm和1.3 μm处存在1/f2谱，钝化后该谱消失。这表明，hBN钝化后，由于短通道中VDS引起的导电层迁移被抑制。本研究对于从表面性质出发理解二维材料的电特性变化和导电通道的运动具有重要意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Physics and Chemistry of Solids 工程技术-化学综合

CiteScore

7.80

自引率

2.50%

发文量

605

审稿时长

40 days

期刊介绍： The Journal of Physics and Chemistry of Solids is a well-established international medium for publication of archival research in condensed matter and materials sciences. Areas of interest broadly include experimental and theoretical research on electronic, magnetic, spectroscopic and structural properties as well as the statistical mechanics and thermodynamics of materials. The focus is on gaining physical and chemical insight into the properties and potential applications of condensed matter systems. Within the broad scope of the journal, beyond regular contributions, the editors have identified submissions in the following areas of physics and chemistry of solids to be of special current interest to the journal: Low-dimensional systems Exotic states of quantum electron matter including topological phases Energy conversion and storage Interfaces, nanoparticles and catalysts.