{"title":"Synthesis and characterization of TiO2-x%Nb thin films: The role of Nb doping on ultraviolet performance","authors":"Ali Shirpay","doi":"10.1016/j.mseb.2025.118523","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, TiO<sub>2</sub>-x%Nb (x = 0, 1, 2, 4, 6) thin films were synthesized on glass substrates using the liquid phase deposition (LPD) method. To achieve uniformity, the thin films were deposited in two steps and subsequently annealed at 550 °C. The resulting thin films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), EDX, optical spectroscopy, and ultraviolet (UV) photoresponse measurements. XRD analysis revealed that the undoped TiO<sub>2</sub> thin film exhibited diffraction peaks corresponding to the TiO<sub>2</sub> phase. However, due to the thin nature of the Nb-doped thin films, no distinct Nb-related peaks were observed. FE-SEM images showed a relatively uniform distribution of nanoparticles across the film surfaces. Cross-sectional image indicated that the thickness was approximately 500 nm. UV–Vis spectroscopy demonstrated that Nb doping had a minimal effect on the energy gap of TiO<sub>2</sub>-x%Nb thin films. Among the samples, the TiO<sub>2</sub>-4 %Nb thin film exhibited the highest UV photoresponse, with a photocurrent of approximately 70 μA under UV illumination at a 10 V bias voltage. This enhanced response is attributed to the increased charge carrier density resulting from Nb incorporation. Finally, key performance metrics of the UV sensors, including Response, quantum efficiency, specific detection, and UV sensitivity were calculated and analyzed for TiO<sub>2</sub>:x%Nb thin films.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"321 ","pages":"Article 118523"},"PeriodicalIF":3.9000,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725005471","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, TiO2-x%Nb (x = 0, 1, 2, 4, 6) thin films were synthesized on glass substrates using the liquid phase deposition (LPD) method. To achieve uniformity, the thin films were deposited in two steps and subsequently annealed at 550 °C. The resulting thin films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), EDX, optical spectroscopy, and ultraviolet (UV) photoresponse measurements. XRD analysis revealed that the undoped TiO2 thin film exhibited diffraction peaks corresponding to the TiO2 phase. However, due to the thin nature of the Nb-doped thin films, no distinct Nb-related peaks were observed. FE-SEM images showed a relatively uniform distribution of nanoparticles across the film surfaces. Cross-sectional image indicated that the thickness was approximately 500 nm. UV–Vis spectroscopy demonstrated that Nb doping had a minimal effect on the energy gap of TiO2-x%Nb thin films. Among the samples, the TiO2-4 %Nb thin film exhibited the highest UV photoresponse, with a photocurrent of approximately 70 μA under UV illumination at a 10 V bias voltage. This enhanced response is attributed to the increased charge carrier density resulting from Nb incorporation. Finally, key performance metrics of the UV sensors, including Response, quantum efficiency, specific detection, and UV sensitivity were calculated and analyzed for TiO2:x%Nb thin films.
期刊介绍:
The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.